Patents by Inventor Garam Park

Garam Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11021650
    Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: June 1, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Ha Il Kwon, Tae Gon Kim, Shang Hyeun Park, Eun Joo Jang, Shin Ae Jun, Garam Park
  • Publication number: 20210147749
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
    Type: Application
    Filed: November 18, 2020
    Publication date: May 20, 2021
    Inventors: Taekhoon KIM, Shin Ae JUN, Yong Wook KIM, Tae Gon KIM, Garam PARK
  • Patent number: 11011672
    Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
    Type: Grant
    Filed: February 10, 2020
    Date of Patent: May 18, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Tae Hyung Kim, Eun Joo Jang, Hyo Sook Jang, Shin Ae Jun, Yongwook Kim, Taekhoon Kim, Jihyun Min, Yuho Won
  • Publication number: 20210095205
    Abstract: A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 1, 2021
    Inventors: Jooyeon AHN, Jongmin LEE, Taekhoon KIM, Shin Ae JUN, Tae Gon KIM, Garam PARK
  • Publication number: 20210009899
    Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
    Type: Application
    Filed: July 1, 2020
    Publication date: January 14, 2021
    Inventors: Nayoun WON, Garam PARK, Shin Ae JUN, Tae Gon KIM, Taekhoon KIM, Shang Hyeun PARK, Mi Hye LIM
  • Publication number: 20200407631
    Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 31, 2020
    Inventors: Hyeyeon YANG, Garam PARK, Shin Ae JUN, Tae Gon KIM, Taekhoon KIM
  • Publication number: 20200283680
    Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Inventors: Shin Ae JUN, Taekhoon KIM, Garam PARK, Yong Seok HAN, Eun Joo JANG, Hyo Sook JANG, Tae Won JEONG, Shang Hyeun PARK
  • Patent number: 10723942
    Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: July 28, 2020
    Assignees: SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Shin Ae Jun, Taekhoon Kim, Garam Park, Yong Seok Han, Eun Joo Jang, Hyo Sook Jang, Tae Won Jeong, Shang Hyeun Park
  • Publication number: 20200217974
    Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
    Type: Application
    Filed: March 20, 2020
    Publication date: July 9, 2020
    Inventors: Garam PARK, Tae Gon KIM, Nayoun WON, Shin Ae JUN, Soo Kyung KWON, Seon-Yeong KIM, Shang Hyeun PARK, Jooyeon AHN, Yuho WON, Eun Joo JANG, Hyo Sook JANG
  • Publication number: 20200220043
    Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
    Type: Application
    Filed: February 10, 2020
    Publication date: July 9, 2020
    Inventors: Garam PARK, Tae Hyung KIM, Eun Joo JANG, Hyo Sook JANG, Shin Ae JUN, Yongwook KIM, Taekhoon KIM, Jihyun MIN, Yuho WON
  • Publication number: 20200190401
    Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers
    Type: Application
    Filed: February 24, 2020
    Publication date: June 18, 2020
    Inventors: Jihyun MIN, Eun Joo JANG, Yongwook KIM, Garam PARK
  • Publication number: 20200172806
    Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
    Type: Application
    Filed: July 10, 2019
    Publication date: June 4, 2020
    Inventors: Garam PARK, Tae Gon KIM, Jooyeon AHN, Ji-Yeong KIM, Nayoun WON, Shin Ae JUN
  • Publication number: 20200174288
    Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.
    Type: Application
    Filed: November 27, 2019
    Publication date: June 4, 2020
    Inventors: Tae Gon KIM, Garam PARK, Jooyeon AHN, Shang Hyeun PARK, Shin Ae JUN
  • Patent number: 10619096
    Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: April 14, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Garam Park, Tae Gon Kim, Nayoun Won, Shin Ae Jun, Soo Kyung Kwon, Seon-Yeong Kim, Shang Hyeun Park, Jooyeon Ahn, Yuho Won, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 10597580
    Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: March 24, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jihyun Min, Eun Joo Jang, Yongwook Kim, Garam Park
  • Patent number: 10559712
    Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: February 11, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Tae Hyung Kim, Eun Joo Jang, Hyo Sook Jang, Shin Ae Jun, Yongwook Kim, Taekhoon Kim, Jihyun Min, Yuho Won
  • Publication number: 20190211260
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 11, 2019
    Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN
  • Publication number: 20190211265
    Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 11, 2019
    Inventors: Garam PARK, Tae Gon KIM, Nayoun WON, Shin Ae JUN, Soo Kyung KWON, Seon-Yeong KIM, Shang Hyeun PARK, Jooyeon AHN, Yuho WON, Eun Joo JANG, Hyo Sook JANG
  • Patent number: 10323179
    Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: June 18, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jihyun Min, Eun Joo Jang, Yongwook Kim, Garam Park
  • Publication number: 20190006556
    Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
    Type: Application
    Filed: August 24, 2018
    Publication date: January 3, 2019
    Inventors: Garam PARK, Tae Hyung KIM, Eun Joo JANG, Hyo Sook JANG, Shin Ae JUN, Yongwook KIM, Taekhoon KIM, Jihyun MIN, Yuho WON