Abstract: A device that is capable of eliminating a power trace that can be analyzed in a power analysis attack and serves as a highly effective countermeasure against power analysis attacks. The device comprising an optical source providing optical energy to an integrated circuit. An optical detector optically linked to the optical source and converts the optical energy from the optical source into electrical energy to power a secure circuit.

Abstract: A device that is capable of eliminating a power trace that can be analyzed in a power analysis attack and serves as a highly effective countermeasure against power analysis attacks. The device comprising an optical source providing optical energy to an integrated circuit. An optical detector optically linked to the optical source and converts the optical energy from the optical source into electrical energy to power a secure circuit.

Abstract: A device that is capable of eliminating a power trace that can be analyzed in a power analysis attack and serves as a highly effective countermeasure against power analysis attacks. The device comprising an optical source providing optical energy to an integrated circuit. An optical detector optically linked to the optical source and converts the optical energy from the optical source into electrical energy to power a secure circuit.

Abstract: A device that is capable of eliminating a power trace that can be analyzed in a power analysis attack and serves as a highly effective countermeasure against power analysis attacks. The device comprising an optical source providing optical energy to an integrated circuit. An optical detector optically linked to the optical source and converts the optical energy from the optical source into electrical energy to power a secure circuit.

Abstract: Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator.

Abstract: Apparatuses and methods for a temperature insensitive electro-absorption modulator and laser. The device comprising a laser capable of emitting light. The laser itself includes a laser gain section, a first mirror and a second mirror. Each of the mirrors are coupled to the laser gain section. The laser gain section contains quantum wells. The first mirror and the second mirror have a wavelength bandwidth sufficient for a lasing wavelength range of the laser. A modulator is coupled to the laser to receive the light and is capable of modulating the light to vary the output from the modulator. The modulator contains quantum wells and has a quantum well confinement factor that is greater than 0.1. An output coupler is coupled to the modulator and the output coupler has a back reflection that is less than half of a back reflection of the second mirror. The laser has a lasing wavelength that tracks the absorption spectrum of the modulator.

Abstract: A photonic coupler including a substrate, first and second waveguides disposed along a longitudinal direction of the substrate for propagation of respective first and second optical signals along the longitudinal direction, and a coupling region between the first and second waveguides and including a medium of a refractive index different from the first and second waveguides. The coupling region has a width extending from the first waveguide to the second waveguide and a breadth extending laterally to form an angle to the longitudinal direction for frustrated total internal reflection of the first optical signal at an interface between the coupling region and the first waveguide.

Abstract: A system and a method of manufacture for a semiconductor laser with a continuous waveguide ridge extending the length of the laser. The continuous waveguide ridge is positioned through the center of the optical components of the semiconductor laser. The optical components including the waveguide ridge may be distributed Bragg reflectors (DBRs), outcoupling gratings, and phase controllers. The illustrated embodiments include lateral-grating grating-stabilized edge-emitting lasers and lateral-grating grating-stabilized surface-emitting (GSE) lasers. Both loss-coupled and non-loss-coupled lateral-grating components are illustrated.

Abstract: An improved grating-outcoupled surface-emitting semiconductor laser architecture is provided. A second-order grating is placed between two distributed Bragg reflector gratings. The period of the second order grating is positively or negatively detuned from the distributed Bragg reflector selected optical wavelength at which the laser operates. Detuning of the second-order grating towards shorter or longer wavelengths allows kink-free, linear LI curves light output versus forward current) for grating-outcoupled surface-emitting lasers. Due to the detuning of the outcoupler grating, the outcoupled radiation emits two beams that deviate slightly from the normal axis. A design point may then be chosen where the power outcoupled by symmetric and antisymmetric modes cross and where the outcoupled power is independent of the phase variation.

Abstract: A single-mode grating-outcoupled surface emitting (GSE) semiconductor laser architecture is provided. This architecture enables high speed modulation of the GSE laser, which is accomplished by only varying the relative phase of counter propagating waves in the outcoupler grating region of the lasing cavity.