Abstract: A semiconductor module includes a semiconductor chip, a lead frame having lead fingers, and a down set member within an encapsulant for reduce warpage and providing a more planar package by balancing thermal stress between the lead fingers and the encapsulant. The down set member can be a bent portion of the lead frame. It can also be a separate body, such as a dummy semiconductor chip.

Abstract: A leadframe has conductive fingers with an insulating film located on a first portion of the fingers. The insulating film has openings into which contact pads formed of a noble metal are provided. Pads on a chip are wire bonded to these contact pads on the leadframe. The first portion is encapsulated in a molded package. The structure inhibits silver migration, provides insulation between wires and leadframe, and provides improved adhesion between plastic package and leadframe. A single insulating film with openings for providing the contact pads provides all these features.

Abstract: A leadframe has conductive fingers with an insulating film located on a first portion of the fingers. The insulating film has openings into which contact pads formed of a noble metal are provided. Pads on a chip are wire bonded to these contact pads on the leadframe. The first portion is encapsulated in a molded package. The structure inhibits silver migration, provides insulation between wires and leadframe, and provides improved adhesion between plastic package and leadframe. A single insulating film with openings for providing the contact pads provides all these features.

Abstract: The present invention provides a method for forming an improved lead-on chip semiconductor module and an improved module of this type. In a lead-on chip semiconductor device, a semiconductor chip which has a major surface having input and output bonding pads thereon, is secured to a lead frame having a plurality of leads adjacent the bonding pads by means of bonding wires connecting a respective one of the leads to a pad on the chip. A coating of dielectric material having a Young's modulus in the range of about 10 psi to about 500 psi is disposed around the entire length of each of the wires and over the pads and over the portion of the respective leads to which the wires are connected to act as a stress buffer. This material preferably has a T.sub.g of at least as low as -40.degree. C. Also preferably this package is encapsulated with conventional encapsulant.

Abstract: This is a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires.

Abstract: A method of making a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires.