Abstract: An apparatus is disclosed for waveform-tailored average power tracking. In an example aspect, the apparatus includes an amplifier, a power converter, and an average power tracking module. The amplifier is configured to amplify radio-frequency signals using a supply voltage. The radio-frequency signals have different waveforms. The power converter is coupled to the amplifier and configured to provide the supply voltage. The average power tracking module is coupled to the power converter and configured to adjust the supply voltage according to the different waveforms to cause the supply voltage to vary across at least two waveforms of the different waveforms for related average output powers.

Abstract: An apparatus is disclosed for waveform-tailored average power tracking. In an example aspect, the apparatus includes an amplifier, a power converter, and an average power tracking module. The amplifier is configured to amplify radio-frequency signals using a supply voltage. The radio-frequency signals have different waveforms. The power converter is coupled to the amplifier and configured to provide the supply voltage. The average power tracking module is coupled to the power converter and configured to adjust the supply voltage according to the different waveforms to cause the supply voltage to vary across at least two waveforms of the different waveforms for related average output powers.

Abstract: An amplifier circuit includes an amplifier configured to receive a radio frequency (RF) input signal from an input node, a bias circuit comprising a reference transistor coupled between a reference current source and ground, and a bias transistor coupled to the reference transistor and configured to generate a main bias current to bias the amplifier, an input power sense circuit coupled to the input node, and an additional transistor coupled to the input power sense circuit and to the bias transistor, the additional transistor configured to generate an additional bias current to bias the amplifier, the additional bias current responsive to a power level of the RF input signal.

Abstract: An apparatus is disclosed for waveform-tailored average power tracking. In an example aspect, the apparatus includes an amplifier, a power converter, and an average power tracking module. The amplifier is configured to amplify radio-frequency signals using a supply voltage. The radio-frequency signals have different waveforms. The power converter is coupled to the amplifier and configured to provide the supply voltage. The average power tracking module is coupled to the power converter and configured to adjust the supply voltage according to the different waveforms to cause the supply voltage to vary across at least two waveforms of the different waveforms for related average output powers.

Abstract: Certain aspects of the present disclosure are directed to an amplifier. The amplifier may include a transistor coupled to an output of the amplifier, and a resonator coupled between the output of the amplifier and a reference potential node, a resonant frequency of the resonator being set to be at a subharmonic of a fundamental frequency of the amplifier, and an impedance of the resonator being greater than a load impedance of the amplifier at the fundamental frequency of the amplifier.

Abstract: An amplifier circuit includes an amplifier configured to receive a radio frequency (RF) input signal from an input node, a bias circuit comprising a reference transistor coupled between a reference current source and ground, and a bias transistor coupled to the reference transistor and configured to generate a main bias current to bias the amplifier, an input power sense circuit coupled to the input node, and an additional transistor coupled to the input power sense circuit and to the bias transistor, the additional transistor configured to generate an additional bias current to bias the amplifier, the additional bias current responsive to a power level of the RF input signal.

Abstract: Certain aspects of the present disclosure are directed to an amplifier. The amplifier may include a transistor coupled to an output of the amplifier, and a resonator coupled between the output of the amplifier and a reference potential node, a resonant frequency of the resonator being set to be at a subharmonic of a fundamental frequency of the amplifier, and an impedance of the resonator being greater than a load impedance of the amplifier at the fundamental frequency of the amplifier.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for current-limiting protection of an amplifier, such as a power amplifier in a radio frequency (RF) front-end. One example current-limiting circuit generally includes a node coupled to a current source, a plurality of current-sinking devices coupled to the node, one or more switches coupled between the node and at least one of the plurality of current-sinking devices, and a bias circuit having an input coupled to the node and an output for coupling to an input of the amplifier.

Abstract: An amplifier circuit includes a driver amplifier implemented on a silicon-on-insulator (SOI) substrate and configured to amplify a radio frequency (RF) signal, a bypass circuit implemented on the SOI substrate and configured to selectively bypass the driver amplifier, an output coupled to the driver amplifier and the bypass circuit, an interconnect configured to couple the output to a gallium arsenide (GaAs) substrate, and a power amplifier implemented on the GaAs substrate and configured to amplify a signal received over the interconnect from the output.

Abstract: A circuit including a radio frequency (RF) amplifier including a transistor configured to receive an RF signal at its control terminal, a capacitor coupled to a first terminal of the transistor, an inductor coupled to a second terminal of the transistor, wherein the capacitor and inductor form a loop from the first terminal to the second terminal, wherein the loop bypasses a parasitic inductance between the second terminal and ground.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for operating a power amplifier. In one example, the apparatus includes a power amplifier configured to amplify an input signal having a frequency to produce a radio frequency (RF) output signal at an output and a harmonic tuning circuit coupled between a power supply and the power amplifier output, the harmonic tuning circuit configured to reduce a current or voltage provided to the power amplifier via a resonance at one or more harmonics of the frequency of the input signal.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for operating a power amplifier. In one example, the apparatus includes a power amplifier configured to amplify an input signal having a frequency to produce a radio frequency (RF) output signal at an output and a harmonic tuning circuit coupled between a power supply and the power amplifier output, the harmonic tuning circuit configured to reduce a current or voltage provided to the power amplifier via a resonance at one or more harmonics of the frequency of the input signal.

Abstract: Certain aspects of the present disclosure provide methods and apparatus for current-limiting protection of an amplifier, such as a power amplifier in a radio frequency (RF) front-end. One example current-limiting circuit generally includes a node coupled to a current source, a plurality of current-sinking devices coupled to the node, one or more switches coupled between the node and at least one of the plurality of current-sinking devices, and a bias circuit having an input coupled to the node and an output for coupling to an input of the amplifier.

Abstract: A circuit including a radio frequency (RF) amplifier including a transistor configured to receive an RF signal at its control terminal, a capacitor coupled to a first terminal of the transistor, an inductor coupled to a second terminal of the transistor, wherein the capacitor and inductor form a loop from the first terminal to the second terminal, wherein the loop bypasses a parasitic inductance between the second terminal and ground.

Abstract: An output matching network comprising a plurality of impedance matching circuits. The inputs of each of the plurality of impedance matching circuits are connected to a first input of the output matching network. The outputs of each of the plurality of impedance matching circuits are connected to a plurality of first outputs of the output matching network. One of the plurality of impedance matching circuits is active at a given time. The active impedance matching circuit of the plurality of impedance matching circuits exhibits a first input impendence at a first frequency band. Each inactive impedance matching circuit of the plurality of impedance matching circuits exhibits a second input impedance at the first frequency band. The second input impendence is at least 10 times greater than the first input impendence.

Abstract: A low leakage logic circuit. The low leakage logic circuit includes a control circuit for logic circuit. The control circuit has a first transistor, a second transistor, a third transistor, a first diode, a first resistor and a second resistor. When the control circuit is ON, a first circuit path in the logic circuit is supplied with a first voltage from the source terminal of the third transistor. This voltage acts as a logic output and has the ability to source current at output terminal of the logic circuit. When the control circuit is OFF, a second circuit path in the logic circuit is supplied with a second voltage from the control circuit which is lower than the turn-on voltage of the second circuit path. This voltage is insufficient to turn ON the logic circuit, hence no current flows into the logic circuit.

Abstract: A multi-mode RF power amplifier circuit that operates under dynamic power supply conditions. The power amplifier circuit operates under a high power mode and a low power mode. The multi-mode RF power amplifier includes a low power path and a high power path. Under the high power mode of operation, the high power path becomes active and the low power path becomes inactive. Each of the low power path and the high power path includes impedance matching networks and power amplifiers. Under either mode of operation, an inactive path will present at least five times higher input impedance than that of an active path. An impedance matching network connected between output terminals of the high power path and the low power path provides isolation between the output terminals of the high power path and the low power path.

Abstract: A power amplifier having a driver stage and an output stage is configured to provide an amplified RF input signal. The driver stage of the power amplifier consists of one or more driver circuits consisting of a network of transistors, current sources, capacitive elements and resistive elements. An RF input signal is fed into the driver stage which is configured to provide a dynamic DC bias and an RF signal gain to a base terminal of a Bipolar Junction Transistor (BJT) power device present in the output stage. The output stage includes of a network of transistors, capacitive and resistive elements and when driven by the DC bias and the RF signal from the driver stage produces an amplified RF input signal at an output side of the output stage.

Abstract: A multi-mode RF amplifier is described having at least a higher and a lower power path coupling an input to an output. At a pre-selected output power level, the higher power path is enabled while the lower power path is disabled when more output power is required. The process is reversed when less power is needed. The present invention matches the power gain variation over temperature characteristic of each path such that, especially at the cross over point, the gain delta (the difference in power gain between the two paths) has minimal variation over temperature. Such power gain characteristic is required for meeting the test requirements, specifically the inner loop power control, for third generation (3G) cellular handsets.

Abstract: A multi-mode RF amplifier is disclosed having high and low output power modes composed of two power paths. When the multi-mode RF amplifier is biased into the high power, HP, mode, substantial power is delivered via both (first and second) paths. While in the low power, LP, mode, power is delivered via second path only which is designed to reduce current consumption and improve efficiency under low power (backoff) operation. The multi-mode RF amplifier has power amplifiers in one embodiment, but no mechanical or electronic switches. The multi-mode amplifier utilizes impedance matching circuits where the impedances change under different power amplifier bias conditions in order to optimize current consumption under both modes of operations and is power efficient for portable applications. Note that, in a preferred embodiment, even in the HP mode more power is delivered to the second power path than to the first power path.