Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: In one example, an optical device may include a waveguide having a core index of refraction that decreases along a length of the waveguide and an edge index of refraction of the waveguide that is constant along the length of the waveguide. The central rays of the optical signals travelling through the waveguide may be refracted towards higher radii while the outer rays propagate unaffected. The optical device may decrease dispersion of the optical signals travelling through an optical fiber.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: In one example, an optical device may include a waveguide having a core index of refraction that decreases along a length of the waveguide and an edge index of refection of the waveguide that is constant along the length of the waveguide. The central rays of the optical signals travelling through the waveguide may be refracted towards higher radii while the outer rays propagate unaffected. The optical device may decrease dispersion of the optical signals travelling through an optical fiber.

Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

Abstract: One example embodiment includes an optical subassembly (OSA). The OSA includes a flex circuit, an optical port, and an active optical component subassembly. The flex circuit is constructed of at least one electrically-conductive layer and at least one electrical insulator layer. The optical port defines a barrel cavity and is mechanically coupled to the flex circuit at a flex connection. The active optical component subassembly is positioned within the barrel cavity and electrically coupled to the flex circuit.

Abstract: One example embodiment includes an optical subassembly (OSA). The OSA includes a flex circuit, an optical port, and an active optical component subassembly. The flex circuit is constructed of at least one electrically-conductive layer and at least one electrical insulator layer. The optical port defines a barrel cavity and is mechanically coupled to the flex circuit at a flex connection. The active optical component subassembly is positioned within the barrel cavity and electrically coupled to the flex circuit.

Abstract: One example embodiment includes an optical subassembly (OSA). The OSA includes a flex circuit, an optical port, and an active optical component subassembly. The flex circuit is constructed of at least one electrically-conductive layer and at least one electrical insulator layer. The optical port defines a barrel cavity and is mechanically coupled to the flex circuit at a flex connection. The active optical component subassembly is positioned within the barrel cavity and electrically coupled to the flex circuit.

Abstract: Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an axis of optical signal transmission of the VCSEL is substantially parallel to an axis of optical signal reception by the photodiode.

Abstract: A laser can include an active region having: one or more quantum wells having InGaAsP; and two or more quantum well barriers having GaAsP bounding the one or more quantum wells, wherein the active region is devoid of Al. The laser emits light having about 850 nm. The one or more quantum wells can have a composition InxGa1-xAs1-yPy according to Equation 1: y=0.0018567*QW+1.18*x?0.14373, where QW is the width of the quantum well in Angstroms; x is mole fraction of In; and y is mole fraction of P or +/?0.1 thereof. The two or more quantum well barriers have a GaAs1-zPz composition with z ranging from about 0.30 to about 0.60, where 0.45 can be optimal. The two or more quantum well barriers have a thickness of about 30 to 60 Angstroms.

Abstract: In one example embodiment, an electromagnetic radiation (EMR) shield includes a central portion, a plurality of arms extending radially outward from the central portion, and a substantially centrally located opening defined in the central portion. The perimeter of the central portion is approximately the same size and shape as that of a portion of an associated optical subassembly (OSA).

Abstract: In one example embodiment, an electromagnetic radiation (EMR) shield includes a central portion, an opening defined in the central portion, a wing attached to and extending outward from the central portion, and a protrusion defined in the wing. The perimeter of the EMR shield is approximately the same size and shape as that of a portion of an associated optical subassembly (OSA).

Abstract: In one example embodiment, an electromagnetic radiation (EMR) shield includes a disk, and a substantially centrally located opening defined in the disk. An outside perimeter of the disk is approximately the same as that of a flange of an associated optical subassembly (OSA). The disk defines a plurality of apertures.

Abstract: Monolithic opto-isolators and arrays of monolithic opto-isolators are disclosed. The monolithic opto-isolators are manufactured in a single semiconductor wafer where they may be tested at the wafer level before each opto-isolator is singulated from the wafer. The monolithic opto-isolators include a VCSEL monolithically produced adjacent to a photodiode where an axis of optical signal transmission of the VCSEL is substantially parallel to an axis of optical signal reception by the photodiode.