Abstract: Fluorinated copolymers useful in photoresist compositions and associated processes for microlithography are described. These copolymers are comprised of a fluoroalcohol or protected fluoroalcohol functional group which simultaneously imparts high ultraviolet (UV) transparency and developability in basic media to these materials and a repeat unit derived from an acrylate monomer containing a fluoroalkyl group or a hydroxyl substituted alkyl group. The materials of this invention have high UV transparency, particularly at 193 and 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of esters derived from fluoroalcohol functional groups that simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: Fluorinated polymers, photoresists and associated processes for microlithography are described. These polymers and photoresists are comprised of esters derived from fluoroalcohol functional groups that simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: It has been found that surface reactions with basic materials such as amines found in the processing environment during lithographic processing contribute to a loss of linewidth control for resists such as chemically amplified resists. This loss in linewidth results from the reaction of the acid generated by exposing radiation with, for example, the amine resulting in a lack of chemical reaction where such reaction is desired. The problem is solved in one embodiment by employing an acid containing barrier layer on the resist.

Abstract: Planarization of geometrically difficult semiconductor device surfaces is accomplished utilizing a coating technique in which on an object with a flat surface is used to planarize the coating material. In particular, device processing is accomplished by including a step that produces a planar surface by coating a nonplanar surface with a material that has a viscosity of less than 1000 cp. An object with a flat surface is placed into contact with the material in such a manner that the material is planarized to a desired degree. The material is cured while in contact with the object's flat surface. The object is then separated from the material. The planarity of the planarizing material is then transferred into the underlying layer using conventional techniques.

Abstract: A class of chlorinated or brominated polymeric negative resists for high resolution X-ray or electron lithographic processes is described. Chlorine and bromine atoms have a generally high mass absorption coefficient for X-rays and can be incorporated into the polymer in high weight percents. The chlorinated resists are especially sensitive to the 4.37 Angstrom characteristic X-rays from a Pd target.

Abstract: The use of dopants enhances optical contrast and range of writing speeds in liquid crystal display devices. Such dopants are characterized by greater solubility in the isotropic phase than in the liquid-crystalline phase of a liquid crystal material.