Abstract: A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

Abstract: A system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof through a system (20) having a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load lock station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one deposition station (32, 34) in the housing (22), and to a cooling station 36 prior to exiting of the system through an exit load lock station (28). The resultant semiconductor coated glass sheet (G) has tong marks (44?) formed during the coating processing.

Abstract: A system (20) and method for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof through a system (20) having a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load lock station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one deposition station (32, 34) in the housing (22), and to a cooling station 36 prior to exiting of the system through an exit load lock station (28). The resultant semiconductor coated glass sheet (G) has tong marks (44?) formed during the coating processing.

Abstract: A system (20, 20?) and method for cooling semiconductor coated hot glass sheets in a cooling station (36) within a vacuum chamber (24). The semiconductor coated hot glass sheets are conveyed between radiant heat absorbing members (112) of a radiant heat absorber (110) to provide the cooling. In one embodiment the glass sheets are conveyed vertically for the cooling and in another the glass sheets are conveyed horizontally.

Abstract: A system (20) and method for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof through a system (20) having a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load lock station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one deposition station (32, 34) in the housing (22), and to a cooling station 36 prior to exiting of the system through an exit load lock station (28). The resultant semiconductor coated glass sheet (G) has tong marks (44?) formed during the coating processing.

Abstract: A chemical vapor deposition system (10) includes a housing (12) having an entry (30) and an exit (32) through which glass sheet substrates (G) to be coated are introduced and exited from a deposition chamber (14) defined by lower and upper housing portions (16, 18) having a seal assembly (22) at their horizontal junction which is higher than both the entry and the exit.

Abstract: A chemical vapor deposition system (10) includes a housing (12) having an entry (30) and an exit (32) through which glass sheet substrates (G) to be coated are introduced and exited from a deposition chamber (14) defined by lower and upper housing portions (16, 18) having a seal assembly (22) at their horizontal junction which is higher than both the entry and the exit.