Patents by Inventor Gary W. Rubloff

Gary W. Rubloff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082715
    Abstract: A solid-state device includes a substrate with a stack of constituent thin-film layers that define an arrangement of electrodes and intervening layers. The constituent layers can conform to or follow a non-planar surface of the substrate, thereby providing a 3-D non-planar geometry to the stack. Fabrication employs a common shadow mask moved between lateral positions offset from each other to sequentially form at least some of the layers in the stack, whereby layers with a similar function (e.g., anode, cathode, etc.) can be electrically connected together at respective edge regions. Wiring layers can be coupled to the edge regions for making electrical connection to the respective subset of layers, thereby simplifying the fabrication process. By appropriate selection and deposition of the constituent layers, the multi-layer device can be configured as an energy storage device, an electro-optic device, a sensing device, or any other solid-state device.
    Type: Application
    Filed: January 3, 2019
    Publication date: March 18, 2021
    Inventors: Gary W. Rubloff, Sang Bok Lee, Keith Gregorczyk
  • Patent number: 10826065
    Abstract: A protection layer is formed on a highly-reactive substantially-pure metal anode to a thickness of between 1 nm and 200 nm, inclusive, using atomic layer deposition (ALD). The ALD protection layer allows the conduction of ions of the metal of the anode therethrough but suppresses electron transport therethrough. The ALD protection layer may also be effective to inhibit passage of air and/or water therethrough. The ALD protection layer can allow more relaxed purity requirements for subsequent battery assembly, electrolyte specifications, and/or cathode gas purity. Fabrication methods for the protection layers, protected metal anodes, and systems and devices incorporating such protected metal anodes are also disclosed herein.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: November 3, 2020
    Assignee: University of Maryland, College Park
    Inventors: Alexander C. Kozen, Marshall A. Schroeder, Gary W. Rubloff, Liangbing Hu, Malakhi Noked, Sang Bok Lee
  • Patent number: 10032569
    Abstract: An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: July 24, 2018
    Assignee: UNIVERSITY OF MARYLAND, COLLEGE PARK
    Inventors: Gary W. Rubloff, Sang Bok Lee, Israel Perez, Laurent Lecordier, Parag Banerjee, Chanyuan Liu, Xinyi Chen, Eleanor Gillette
  • Publication number: 20170263935
    Abstract: A protection layer is formed on a highly-reactive substantially-pure metal anode to a thickness of between 1 nm and 200 nm, inclusive, using atomic layer deposition (ALD). The ALD protection layer allows the conduction of ions of the metal of the anode therethrough but suppresses electron transport therethrough. The ALD protection layer may also be effective to inhibit passage of air and/or water therethrough. The ALD protection layer can allow more relaxed purity requirements for subsequent battery assembly, electrolyte specifications, and/or cathode gas purity. Fabrication methods for the protection layers, protected metal anodes, and systems and devices incorporating such protected metal anodes are also disclosed herein.
    Type: Application
    Filed: October 5, 2015
    Publication date: September 14, 2017
    Inventors: Alexander C. KOZEN, Marshall A. SCHROEDER, Gary W. RUBLOFF, Liangbing HU, Malakhi NOKED, Sang Bok LEE
  • Publication number: 20150200058
    Abstract: An apparatus, system, and method are provided for a vertical two-terminal nanotube or microtube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical device can include a column disposed in a template material extending from one side of the template material to the other side of the template material. Further, the device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed in the column. A variety of configurations, variations, and modifications are provided.
    Type: Application
    Filed: December 15, 2014
    Publication date: July 16, 2015
    Inventors: Gary W. RUBLOFF, Sang Bok LEE, Israel PEREZ, Laurent LECORDIER, Parag BANERJEE, Chanyuan Liu, Xinyi Chen, Eleanor Gillette
  • Patent number: 8912522
    Abstract: An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material. Further, the vertical nanotube device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed between the first material and the second material. The first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column and extends to the second distal end of the column within the first material.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: December 16, 2014
    Assignee: University of Maryland
    Inventors: Gary W. Rubloff, Sang Bok Lee, Israel Perez, Laurent Lecordier, Parag Banerjee
  • Patent number: 8378333
    Abstract: An apparatus, system, and method are provided for a lateral two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The lateral nanotube device can include a substrate, an anodic oxide material disposed on the substrate, and a column disposed in the anodic oxide material extending from one distal end of the anodic oxide material to another end of the anodic oxide material. The lateral nanotube device further can include a first material disposed within the column, and a second material disposed within the column. The first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column. The second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: February 19, 2013
    Assignee: University of Maryland
    Inventors: Parag Banerjee, Sang Bok Lee, Israel Perez, Erin Robertson, Gary W. Rubloff
  • Publication number: 20110081677
    Abstract: The present invention relates to a biofabricated Active Microfluidic Membrane (AMM) in a microfluidic network of a microfluidic device and a method for the in situ biofabrication of such a microfluidic network. More specifically, the invention relates to devices exhibiting (and methods of) positioning (i.e., erecting, modifying or removing a membrane matrix in situ in a microchannel of a microfluidic network of a microfluidic device. In one embodiment, the membrane comprises a single type of matrix constituent, such as chitosan, alginate, etc. Alternatively, the membrane may be composed of two or more matrix constituents, which may be integrated into one another or layered adjacent to one another.
    Type: Application
    Filed: September 24, 2010
    Publication date: April 7, 2011
    Applicant: University of Maryland, College Park
    Inventors: Xiaolong Luo, Gary W. Rubloff, Dean L. Berlin, William E. Bentley, Susan Buckhout-White, Yi Cheng, Jordan Betz
  • Publication number: 20110073827
    Abstract: An apparatus, system, and method are provided for a vertical two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The vertical nanotube device can include a column disposed in an anodic oxide material extending from a first distal end of the anodic oxide material to a second distal end of the anodic oxide material. Further, the vertical nanotube device can include a first material disposed within the column, a second material disposed within the column, and a third material disposed between the first material and the second material. The first material fills the first distal end of the column and extends to the second distal end of the column along inner walls of the column. The second material fills the first distal end of the column and extends to the second distal end of the column within the first material.
    Type: Application
    Filed: August 26, 2010
    Publication date: March 31, 2011
    Applicant: UNIVERSITY OF MARYLAND
    Inventors: Gary W. RUBLOFF, Sang Bok LEE, Israel PEREZ, Laurent LECORDIER, Parag BANERJEE
  • Patent number: 7883615
    Abstract: A method is provided for electrochemically depositing a polysaccharide mass having a selected physical state. According to an embodiment, an electrically conductive support of a substrate is contacted with an aqueous solution including a selectively insolubilizable polysaccharide, and the selectively insolubilizable polysaccharide is electrochemically deposited on the electrically conductive support while controlling deposition conditions to form the polysaccharide mass having the selected physical state, such as that of a hydrogel. Deposition may be performed in a spatially and/or temporally controlled manner.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: February 8, 2011
    Assignees: University of Maryland, College Park, University of Maryland, Baltimore County
    Inventors: Gregory F. Payne, Li-Qun Wu, Reza Ghodssi, William E. Bentley, Gary W. Rubloff, Hyunmin Yi, Rohan Fernandes, Tianhong Chen, David A. Small
  • Patent number: 7820227
    Abstract: A method for biolithographical deposition of molecules is provided. According to an embodiment of the method, a reactive layer (e.g., a polysaccharide mass) having a surface region coated with a biologically compatible resist is provided. A portion of the biologically compatible resist is selectively removed to expose an exposed portion of the reactive layer. Molecules, such as biomolecules and/or cellular species, are then conjugated to the exposed portion of the reactive layer. Also provided are materials and devices related to the method.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: October 26, 2010
    Assignees: University of Maryland, College Park, University of Maryland, Baltimore County
    Inventors: Gregory F. Payne, Gary W. Rubloff, Hyunmin Yi, Rohan Fernandes, Li-Qun Wu, Reza Ghodssi, William E. Bentley
  • Patent number: 7790010
    Abstract: A method is provided for electrochemically depositing a polymer with spatial selectivity. A substrate having a substrate surface is contacted with an aqueous solution containing a selectively insolubilizable polysaccharide, such as chitosan, which is subjected to electrochemically treatment to deposit, with spatial selectivity, the selectively insolubilizable polysaccharide on a patterned electrically conductive portion of the substrate surface.
    Type: Grant
    Filed: June 17, 2005
    Date of Patent: September 7, 2010
    Assignees: University of Maryland, College Park, University of Maryland, Baltimore County
    Inventors: William E. Bentley, Reza Ghodssi, Gregory F. Payne, Gary W. Rubloff, Li-Qun Wu, Hyunmin Yi, Wolfgang Losert, Douglas S. English
  • Publication number: 20090108252
    Abstract: An apparatus, system, and method are provided for a lateral two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The lateral nanotube device can include a substrate, an anodic oxide material disposed on the substrate, and a column disposed in the anodic oxide material extending from one distal end of the anodic oxide material to another end of the anodic oxide material. The lateral nanotube device further can include a first material disposed within the column, and a second material disposed within the column. The first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column. The second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.
    Type: Application
    Filed: September 26, 2008
    Publication date: April 30, 2009
    Inventors: Parag Banerjee, Sang Bok Lee, Israel Perez, Erin Robertson, Gary W. Rubloff
  • Patent number: 7375404
    Abstract: A micro-electro-mechanical system (MEMS) device is provided, along with means for its fabrication and operation for microfluidic and/or biomicrofluidic applications. The MEMS device includes a substrate, optional electrodes on the substrate, a patterned structure on the substrate, the patterned structure having a fluidic microchannel aligned with one or more of the optional electrodes, an encapsulation membrane covering the microchannel, and an optional reactive layer deposited over the electrode in the microchannel. MEMS devices of preferred embodiments permit a leak-tight seal to be formed around the microchannel and fluidic interconnects established for robust operation of fluidics-based processes. MEMS devices of other preferred embodiments permit reversible attachment and separation of the encapsulation membrane relative to the patterned structure.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: May 20, 2008
    Assignees: University of Maryland Biotechnology Institute, University of Maryland, College Park
    Inventors: Jung Jin Park, Reza Ghodssi, Gary W. Rubloff, Mark Joseph Kastantin, Sheng Li, Li-Qun Wu, Hyunmin Yi, Theresa Michelle Valentine
  • Patent number: 6821910
    Abstract: A multizone, segmented showerhead provides a gas impingement flux distribution which is controllable in two lateral dimensions to achieve programmable uniformity in chemical vapor deposition, in plasma deposition and etching and other processes. Recirculation (pumping) of exhaust gases back through the showerhead reduces intersegment mixing to achieve a high degree of spatial control of the process. This spatial control of the impinging gas flux distribution assures that uniformity can be achieved at process design points selected to optimize materials performance. Spatial control also permits rapid experimentation by enabling the introduction of intentional nonuniformities so that combinatorial data from across the wafer/substrate provides results of simultaneous experiments at different process design points. This ability is useful for process tuning and optimization in manufacturing or for rapid materials and process discovery and optimization in research and development.
    Type: Grant
    Filed: January 24, 2003
    Date of Patent: November 23, 2004
    Assignee: University of Maryland, College Park
    Inventors: Raymond A. Adomaitis, John N. Kidder, Jr., Gary W. Rubloff
  • Publication number: 20040099213
    Abstract: A multizone, segmented showerhead provides a gas impingement flux distribution which is controllable in two lateral dimensions to achieve programmable uniformity in chemical vapor deposition, in plasma deposition and etching and other processes. Recirculation (pumping) of exhaust gases back through the showerhead reduces intersegment mixing to achieve a high degree of spatial control of the process. This spatial control of the impinging gas flux distribution assures that uniformity can be achieved at process design points selected to optimize materials performance. Spatial control also permits rapid experimentation by enabling the introduction of intentional nonuniformities so that combinatorial data from across the wafer/substrate provides results of simultaneous experiments at different process design points. This ability is useful for process tuning and optimization in manufacturing or for rapid materials and process discovery and optimization in research and development.
    Type: Application
    Filed: January 24, 2003
    Publication date: May 27, 2004
    Inventors: Raymond A Adomaitis, John N Kidder, Gary W Rubloff
  • Patent number: 5290358
    Abstract: System and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography are disclosed, wherein low pressure chemical vapor deposition conditions are employed with the reactant beam collimated and chosen to impinge at a specific angle onto the surface, such that the reactive sticking coefficient s.sub.r with the deposition surface is <1. Compared with conventional approaches, this method permits new shapes of the deposited thin film layer to be achieved over topography (such as trenches), including (i) tapered rather than re-entrant shapes (i.e., thicker at bottom rather than at top), (ii) enhanced sidewall and/or bottom coverage of trench structures (cf. the top surface), (iii) voidless, seamless filling of trench or via structures even at high aspect ratio (depth/width), and (iv) asymmetric sidewall coverage.
    Type: Grant
    Filed: September 30, 1992
    Date of Patent: March 1, 1994
    Assignee: International Business Machines Corporation
    Inventors: Gary W. Rubloff, Julian J. Hsieh
  • Patent number: 5284792
    Abstract: A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the position of the facets to be cleaved by scribing marks into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (l.sub.c) defining the length of the laser cavities and the distance (l.sub.
    Type: Grant
    Filed: June 11, 1993
    Date of Patent: February 8, 1994
    Assignee: International Business Machines Corporation
    Inventors: Theodor Forster, Christoph Harder, Albertus Oosenbrug, Gary W. Rubloff
  • Patent number: 5155657
    Abstract: The invention provides a capacitor having increased capacitance comprising one or more main vertical trenches and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second regions, preferably silicon and non-silicon regions (for example, alternating silicon and germanium or alternating silicon and carbon regions). The etch characteristics of the alternating regions are utilized to selectively etch lateral trenches thereby increasing the surface area and capacitance of the capacitor. A method of fabricating the capacitors is also provided.
    Type: Grant
    Filed: October 31, 1991
    Date of Patent: October 13, 1992
    Assignee: International Business Machines Corporation
    Inventors: Gottlieb S. Oehrlein, Vishnubhai V. Patel, Alfred Grill, Rodney T. Hodgson, Gary W. Rubloff
  • Patent number: 5153813
    Abstract: The invention provides a method of increasing the capacitance of a capacitor which comprises forming a capacitor having a main vertical trench and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second silicon regions, for example n-doped and p-doped silicon regions. After a main vertical trench is dry etched through the first and second silicon regions, the etch characteristics of the alternating first and second silicon regions are utilized to selectively dry etch lateral trenches, thereby increasing the surface area of the capacitor and the capacitance of the capacitor. Capacitors produced by this method are also provided.
    Type: Grant
    Filed: October 31, 1991
    Date of Patent: October 6, 1992
    Assignee: International Business Machines Corporation
    Inventors: Gottlieb S. Oehrlein, Gary W. Rubloff