Patents by Inventor Gen Okazaki
Gen Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9129875Abstract: In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.Type: GrantFiled: April 3, 2014Date of Patent: September 8, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Hisashi Yano, Shigeru Suzuki, Gen Okazaki, Akira Oodaira, Motonari Katsuno, Tetsuya Nakamura
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Publication number: 20140210033Abstract: In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.Type: ApplicationFiled: April 3, 2014Publication date: July 31, 2014Applicant: Panasonic CorporationInventors: Hisashi YANO, Shigeru SUZUKI, Gen OKAZAKI, Akira OODAIRA, Motonari KATSUNO, Tetsuya NAKAMURA
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Patent number: 8587076Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: GrantFiled: July 12, 2012Date of Patent: November 19, 2013Assignee: Panasonic CorporationInventors: Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Publication number: 20120273903Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: Panasonic CorporationInventors: Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Patent number: 8253180Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: GrantFiled: March 1, 2011Date of Patent: August 28, 2012Assignee: Panasonic CorporationInventors: Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Publication number: 20110147857Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: ApplicationFiled: March 1, 2011Publication date: June 23, 2011Applicant: PANASONIC CORPORATIONInventors: Junji HIRASE, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Patent number: 7923764Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: GrantFiled: July 20, 2009Date of Patent: April 12, 2011Assignee: Panasonic CorporationInventors: Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Patent number: 7825482Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; a first active region and a second active region surrounded by the isolation region; an n-type gate electrode and a p-type gate electrode formed on gate insulating films; an insulating film and a silicon region formed on the isolation region and isolating the n-type gate electrode and the p-type gate electrode from each other; and a metal silicide film formed on the upper surfaces of the n-type gate electrode, the silicon region, the p-type gate electrode, and part of the insulating film formed therebetween. The n-type gate electrode is electrically connected to the p-type gate electrode through the metal silicide film.Type: GrantFiled: January 4, 2008Date of Patent: November 2, 2010Assignee: Panasonic CorporationInventors: Gen Okazaki, Akio Sebe
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Patent number: 7732839Abstract: A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.Type: GrantFiled: September 22, 2006Date of Patent: June 8, 2010Assignee: Panasonic CorporationInventors: Akio Sebe, Naoki Kotani, Shinji Takeoka, Gen Okazaki, Junji Hirase, Kazuhiko Aida
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Patent number: 7646065Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region in the semiconductor substrate; a gate insulating film formed on the active region; and a gate electrode formed across the boundary between the active region and the isolation region adjacent to the active region. The gate electrode includes a first portion which is located above the active region with the gate insulating film interposed therebetween and is entirely made of a silicide in a thickness direction and a second portion which is located above the isolation region and is made of a silicon region and the silicide region covering the silicon region.Type: GrantFiled: October 4, 2006Date of Patent: January 12, 2010Assignee: Panasonic CorporationInventors: Naoki Kotani, Gen Okazaki, Shinji Takeoka, Junji Hirase, Akio Sebe, Kazuhiko Aida
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Publication number: 20090278210Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: ApplicationFiled: July 20, 2009Publication date: November 12, 2009Applicant: PANASONIC CORPORATIONInventors: Junji HIRASE, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Patent number: 7616259Abstract: A video camera, building in a hard disk drive and an optical disk drive within the same housing, for dissolving a problem of increasing the temperature of hard disk drive due to heats generated within an inside of the main body thereof, comprises: an image pickup portion, which is configured to make photographing; a display portion 6, which is configured to display an image photographed; a hard disk drive 1 which is configured to record the image photographed therein; and an optical disk drive 9, which is configured to drive an optical disk being attached/detached, wherein the display portion 6, the optical disk drive 1, the hard disk 9 are disposed in that order, and the hard disk drive 1 is disposed on a cover portion to be opened when taking out the optical disk from the optical disk drive 9.Type: GrantFiled: January 26, 2007Date of Patent: November 10, 2009Assignee: Hitachi, Ltd.Inventors: Shinichi Ishikuro, Gen Okazaki
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Patent number: 7579227Abstract: A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode.Type: GrantFiled: July 24, 2006Date of Patent: August 25, 2009Assignee: Panasonic CorporationInventors: Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida, Shinji Takeoka
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Publication number: 20080290415Abstract: A semiconductor device includes: an isolation region formed in a semiconductor substrate; a first active region and a second active region surrounded by the isolation region; an n-type gate electrode and a p-type gate electrode formed on gate insulating films; an insulating film and a silicon region formed on the isolation region and isolating the n-type gate electrode and the p-type gate electrode from each other; and a metal silicide film formed on the upper surfaces of the n-type gate electrode, the silicon region, the p-type gate electrode, and part of the insulating film formed therebetween. The n-type gate electrode is electrically connected to the p-type gate electrode through the metal silicide film.Type: ApplicationFiled: January 4, 2008Publication date: November 27, 2008Inventors: Gen OKAZAKI, Akio SEBE
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Patent number: 7456448Abstract: A semiconductor device, including a first MIS-type transistor formed in a first region of a semiconductor region, the first region being of a first conductivity type, the first MIS-type transistor including: a first gate insulating film formed on the first region; a first gate electrode formed on the first gate insulating film; a first extension diffusion layer of a second conductivity type formed in a region of the first region under and beside the first gate electrode; and a first fluorine diffusion layer formed in a first channel region of the first conductivity type sandwiched between portions of the first extension diffusion layer, wherein portions of the first fluorine diffusion layer extend from the first extension diffusion layer and overlap together in a region directly under the first gate electrode.Type: GrantFiled: October 10, 2006Date of Patent: November 25, 2008Assignee: Panasonic CorporationInventors: Naoki Kotani, Akio Sebe, Gen Okazaki, Tokuhiko Tamaki
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Publication number: 20080131097Abstract: A video camera, installing a hard disc and an optical disc therein, as recording media for recording video information thereon, wherein: a housing of the video camera is conducted with a main body housing, and a recording media cover, which can be freely rotated to the main body housing, to be opened/closed; the recording media cover is so structured to be fitted and engaged with, by sliding a hard disc cover to an optical disc cover, by means of an engagement member; the optical disc is loaded detachably within the main body housing of the video camera, by rotationally opening/closing the recording media cover; and the hard disc is disposed in an interior space defined by the optical disc cover and the hard disc cover, under such condition that engagement condition of the recording media cover by means of the engagement member can be removed by only a specific removal member, from an outside thereof.Type: ApplicationFiled: November 2, 2007Publication date: June 5, 2008Applicant: Hitachi, LtdInventor: Gen Okazaki
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Publication number: 20070285517Abstract: A video camera, building in a hard disk drive and an optical disk drive within the same housing, for dissolving a problem of increasing the temperature of hard disk drive due to heats generated within an inside of the main body thereof, comprises: an image pickup portion, which is configured to make photographing; a display portion 6, which is configured to display an image photographed; a hard disk drive 1 which is configured to record the image photographed therein; and an optical disk drive 9, which is configured to drive an optical disk being attached/detached, wherein the display portion 6, the optical disk drive 1, the hard disk 9 are disposed in that order, and the hard disk drive 1 is disposed on a cover portion to be opened when taking out the optical disk from the optical disk drive 9.Type: ApplicationFiled: January 26, 2007Publication date: December 13, 2007Inventors: Shinichi Ishikuro, Gen Okazaki
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Publication number: 20070200185Abstract: A high dielectric constant gate insulating film is formed on an active region of a substrate, and a gate electrode is formed on the high dielectric constant gate insulating film. A high dielectric constant insulating sidewall is formed on a side face of the gate electrode.Type: ApplicationFiled: October 6, 2006Publication date: August 30, 2007Inventors: Junji Hirase, Naoki Kotani, Shinji Takeoka, Gen Okazaki, Akio Sebe, Kazuhiko Aida
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Publication number: 20070173023Abstract: After gate insulating film formation films are formed in an element formation region of a semiconductor substrate, a gate electrode formation film is formed on the gate insulating film formation films. A fluorine-containing insulting film is formed on the gate electrode formation film. Then, thermal treatment is performed to diffuse and introduce the fluorine contained in the fluorine-containing insulating film to interfaces between the semiconductor substrate and the gate insulting film formation films.Type: ApplicationFiled: October 2, 2006Publication date: July 26, 2007Inventors: Gen Okazaki, Naoki Kotani, Tokuhiko Tamaki, Akio Sebe
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Publication number: 20070134898Abstract: After a Ni film is deposited on a substrate on which a gate silicon layer is formed, a mask is formed above the gate silicon layer. Then, the Ni film is etched so as to leave a part of the Ni film which is located on the gate silicon layer. This restricts sideways supply of Ni present on the sides of the gate silicon layer. Thereafter, thermal treatment is performed to silicidate the gate silicon layer entirely.Type: ApplicationFiled: October 16, 2006Publication date: June 14, 2007Inventors: Shinji Takeoka, Junji Hirase, Akio Sebe, Naoki Kotani, Gen Okazaki, Kazuhiko Aida