Patents by Inventor Gen Tamamushi
Gen Tamamushi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240355584Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.Type: ApplicationFiled: July 2, 2024Publication date: October 24, 2024Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Gen TAMAMUSHI, Masahiro INOUE
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Patent number: 12125679Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.Type: GrantFiled: September 23, 2022Date of Patent: October 22, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Gen Tamamushi, Masahiro Inoue, Yuto Kosaka, Shoichiro Matsuyama
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Patent number: 12087591Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.Type: GrantFiled: March 29, 2022Date of Patent: September 10, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Gen Tamamushi, Kazuya Nagaseki
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Patent number: 12057294Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.Type: GrantFiled: December 16, 2020Date of Patent: August 6, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Gen Tamamushi, Masahiro Inoue
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Publication number: 20240222078Abstract: In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode through a feed line. A phase period having a minimum value of a power level of a reflected wave of the source radio-frequency power is identified from a plurality of phase periods in a bias cycle of the electrical bias energy. A reference value being a phase difference between a voltage and a current on the feed line in the identified phase period is determined. A source frequency of the source radio-frequency power is controlled for each phase period based on a result of comparison between the reference value and the phase difference between the voltage and the current on the feed line in a corresponding phase period of the plurality of phase periods.Type: ApplicationFiled: March 15, 2024Publication date: July 4, 2024Applicant: Tokyo Electron LimitedInventor: Gen TAMAMUSHI
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Publication number: 20240170258Abstract: A plasma processing system includes a first RF signal generator configured to generate a first RF signal, a first matching circuit coupled to the first RF signal generator, a second RF signal generator configured to generate a second RF signal, a second matching circuit coupled to the second RF signal generator, a first plasma processing apparatus coupled to the first matching circuit and to the second matching circuit, the first RF signal being supplied to the first plasma processing apparatus, and the second RF signal being supplied to the first plasma processing apparatus, and a second plasma processing apparatus coupled to the first matching circuit, the first RF signal being supplied to the second plasma processing apparatus, and the second RF signal of which the phase is shifted being supplied to the second plasma processing apparatus.Type: ApplicationFiled: January 30, 2024Publication date: May 23, 2024Inventor: Gen TAMAMUSHI
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Patent number: 11984303Abstract: A first electrostatic chuck of a substrate support of the disclosed plasma processing apparatus has first and second electrodes and holds an edge ring. A second electrostatic chuck of the substrate support holds a substrate. The first electrode extends closer to the second electrostatic chuck than the second electrode. During plasma processing, a first voltage having a positive polarity is applied to the first and second electrodes. In a first period after the plasma processing, a second voltage having a negative polarity is applied to the first and second electrodes. In a second period after the first period, a third voltage having a positive polarity is applied to the first electrode, and a fourth voltage having a negative polarity is applied to the second electrode. The absolute value of the third voltage is smaller than the absolute value of the first voltage and the absolute value of the second voltage.Type: GrantFiled: March 2, 2021Date of Patent: May 14, 2024Assignee: Tokyo Electron LimitedInventor: Gen Tamamushi
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Publication number: 20240153742Abstract: A plasma processing method according to the present disclosure includes disposing a substrate on a substrate support, supplying, into a chamber, a processing gas for processing the substrate, generating, in the chamber, a plasma from the processing gas by using a first RF signal and a second RF signal, and applying a bias signal to the substrate support, and generating the plasma includes superimposing the second RF signal on the first RF signal based on a timing when the bias signal is applied to the substrate support.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Inventor: Gen TAMAMUSHI
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Publication number: 20230369019Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply controller. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply periodically provides bias energy having a waveform cycle to a bias electrode on the substrate support. The radio-frequency power supply adjusts a source frequency of the source radio-frequency power in an n-th phase period in an m-th waveform cycle of a plurality of waveform cycles based on a change in a degree of reflection of the source radio-frequency power. The change in the degree of reflection is identified with the source frequency being set differently in the n-th phase period in each of two or more waveform cycles preceding the m-th waveform cycle.Type: ApplicationFiled: July 28, 2023Publication date: November 16, 2023Applicant: Tokyo Electron LimitedInventors: Gen TAMAMUSHI, Chishio KOSHIMIZU, Masahiro INOUE, Shoichiro MATSUYAMA
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Publication number: 20230094655Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.Type: ApplicationFiled: September 23, 2022Publication date: March 30, 2023Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Gen TAMAMUSHI, Masahiro INOUE, Yuto KOSAKA, Shoichiro MATSUYAMA
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Publication number: 20220406568Abstract: A plasma processing method for plasma-processing a substrate with a plasma processing apparatus having a substrate support and an upper electrode inside a chamber, the method comprising: placing the substrate on the substrate support; supplying a processing gas for processing the substrate to the chamber; supplying a radio frequency to the upper electrode or the substrate support to generate plasma from the processing gas inside the chamber; periodically applying a first pulse voltage to the substrate support in a first cycle during a period in which the radio frequency is being supplied; and periodically applying a second pulse voltage to the upper electrode in a second cycle during the period in which the radio frequency is being supplied.Type: ApplicationFiled: June 22, 2022Publication date: December 22, 2022Inventor: Gen TAMAMUSHI
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Patent number: 11443924Abstract: An upper electrode for a plasma processing apparatus, includes an electrode having a gas discharge hole, a gas plate having a gas flow path formed at a position facing the gas discharge hole to supply a processing gas to the gas discharge hole, an electrostatic attraction part interposed between the electrode and the gas plate and having a contact surface that is in contact with a lower surface of the gas plate and an attraction surface that attracts an upper surface of the electrode, and a shield that shields radicals or gas moving from the gas discharge hole to a gap between the electrode and the gas plate.Type: GrantFiled: January 9, 2020Date of Patent: September 13, 2022Assignee: Tokyo Electron LimitedInventors: Gen Tamamushi, Kazuya Nagaseki, Chishio Koshimizu
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Publication number: 20220223427Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.Type: ApplicationFiled: March 29, 2022Publication date: July 14, 2022Applicant: Tokyo Electron LimitedInventors: Gen Tamamushi, Kazuya Nagaseki
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Patent number: 11315793Abstract: An etching method is performed in a state where a substrate is placed on a substrate support provided in a chamber of a plasma processing apparatus. In the etching method, radio-frequency power is supplied to generate plasma from a gas in the chamber. Subsequently, a negative DC voltage is applied to a lower electrode of the substrate support during the supplying of the radio-frequency power to etch the substrate with positive ions from plasma. Subsequently, the applying of the negative DC voltage to the lower electrode and the supplying of the radio-frequency power are stopped to generate negative ions. Subsequently, a positive DC voltage is applied to the lower electrode in a state where the supply of the radio-frequency power is stopped to supply the negative ions to the substrate.Type: GrantFiled: November 5, 2019Date of Patent: April 26, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Gen Tamamushi, Kazuya Nagaseki
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Publication number: 20220093407Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.Type: ApplicationFiled: December 6, 2021Publication date: March 24, 2022Inventor: Gen TAMAMUSHI
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Patent number: 11227773Abstract: A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.Type: GrantFiled: January 14, 2020Date of Patent: January 18, 2022Assignee: TOKYO ELECTRON LIMITEDInventor: Gen Tamamushi
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Publication number: 20210287883Abstract: A first electrostatic chuck of a substrate support of the disclosed plasma processing apparatus has first and second electrodes and holds an edge ring. A second electrostatic chuck of the substrate support holds a substrate. The first electrode extends closer to the second electrostatic chuck than the second electrode. During plasma processing, a first voltage having a positive polarity is applied to the first and second electrodes. In a first period after the plasma processing, a second voltage having a negative polarity is applied to the first and second electrodes. In a second period after the first period, a third voltage having a positive polarity is applied to the first electrode, and a fourth voltage having a negative polarity is applied to the second electrode. The absolute value of the third voltage is smaller than the absolute value of the first voltage and the absolute value of the second voltage.Type: ApplicationFiled: March 2, 2021Publication date: September 16, 2021Applicant: Tokyo Electron LimitedInventor: Gen TAMAMUSHI
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Publication number: 20210183622Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.Type: ApplicationFiled: December 16, 2020Publication date: June 17, 2021Applicant: Tokyo Electron LimitedInventors: Chishio KOSHIMIZU, Gen TAMAMUSHI, Masahiro INOUE
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Patent number: 10943766Abstract: A power feed member having high heat insulation and capable of transmitting a power at a low loss is provided. The power feed member configured to supply a power includes a first conductive member; a second conductive member; and a connecting member configured to electrically connect the first conductive member and the second conductive member. At least a part of the connecting member is formed of a porous metal or multiple bulk metals.Type: GrantFiled: June 25, 2018Date of Patent: March 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shunichi Ito, Shinji Himori, Etsuji Ito, Naokazu Furuya, Gen Tamamushi
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Patent number: 10886135Abstract: In a substrate processing method, electrons having a first energy are supplied from an electron beam generator into an inner space of a chamber body of a substrate processing apparatus to generate negative ions by attaching the electrons to molecules in a processing gas supplied to the inner space. Then a positive bias voltage is applied to an electrode of a supporting table that supports a substrate mounted on thereon in the inner space to attract the negative ions to the substrate.Type: GrantFiled: November 8, 2018Date of Patent: January 5, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shinji Kubota, Kazuya Nagaseki, Akihiro Yokota, Gen Tamamushi