Abstract: A memory system includes a substrate having a first and second surface, a memory controller, a nonvolatile memory, a first and second part, first and first, second, third, and fourth electrodes. The substrate includes a core portion, first and second pads on the first surface, and third and fourth pads on the second surface. The first electrodes couples the first pads and the memory controller. The second electrodes couples the second pads and the nonvolatile memory. The third electrodes couples the third pads and the first part. The fourth electrodes couples the fourth pads and the second part. The first and third pads are arranged at positions symmetrical to each other with respect to the core portion. The second and fourth pads are arranged at positions symmetrical to each other with respect to the core portion.

Abstract: A semiconductor device includes a mounting substrate including an interface, which is connectable with a host, and a first ground layer, a surface-mounted component mounted on the mounting substrate, and a plurality of solder balls between the mounting substrate and the surface-mounted component. The surface-mounted component includes a semiconductor chip, a package substrate that is positioned between the semiconductor chip and the solder balls and includes a second ground layer, a sealing portion that covers the semiconductor chip, and has an opening, a first conductive portion on a top surface of the sealing portion, and a second conductive portion on a side surface of the opening and electrically connected to the first conductive portion and the second ground layer. The second ground layer is electrically connected to the first ground layer through one of the solder balls.

Abstract: A semiconductor device includes a mounting substrate including an interface, which is connectable with a host, and a first ground layer, a surface-mounted component mounted on the mounting substrate, and a plurality of solder balls between the mounting substrate and the surface-mounted component. The surface-mounted component includes a semiconductor chip, a package substrate that is positioned between the semiconductor chip and the solder balls and includes a second ground layer, a sealing portion that covers the semiconductor chip, and has an opening, a first conductive portion on a top surface of the sealing portion, and a second conductive portion on a side surface of the opening and electrically connected to the first conductive portion and the second ground layer. The second ground layer is electrically connected to the first ground layer through one of the solder balls.

Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: According to one embodiment, an LED module includes a substrate, an interconnect layer, a light emitting diode (LED) package, and a reflection member. The interconnect layer is provided on the substrate. The LED package is mounted on the interconnect layer. The reflection member is provided on a region in the substrate where the LED package is not mounted and has a property of reflecting light emitted from the LED package. The LED package includes a first lead frame, a second lead frame, an LED chip, and a resin body. The first lead frame and the second lead frame are arranged apart from each other on the same plane. The LED chip is provided above the first lead frame and the second lead frame, with one terminal connected to the first lead frame and one other terminal connected to the second lead frame.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A semiconductor device is provided that includes a semiconductor layer and an electrode coupled to a semiconductor layer. The electrode includes first and second end portions, the first end portion being closer to the semiconductor layer than the second end portion. The first end portion is formed to have crystals of a first grain size, and the second end portion is formed to have crystals of a second grain size that is larger than the first grain size.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: According to one embodiment, an illumination apparatus includes an LED (Light Emitting Diode) module, a light guide plate, and a support body. The support body supports the LED module and the light guide plate. A reflective surface of the support body is provided between a portion supporting the LED module and a portion supporting the light guide plate. The reflective surface is reflective with respect to the light emitted from the LED package. The LED module is tilted relative to the reflective surface with the LED package mounting surface being toward the reflective surface. An angle between the LED module and the reflective surface is less than 90°.

Abstract: A semiconductor light-emitting device includes first and second lead frames that are arranged with a separation on a common plane, a semiconductor light-emitting element that is electrically connected to the first and second lead frames, and a resin body that covers the first and second lead frames and the semiconductor light-emitting element, and includes fluorescent materials that absorb light emitted from the semiconductor light-emitting element and emit light with a wavelength longer than the wavelength of the light absorbed. The resin body has a shape that becomes smaller in cross-section with increasing distance from the common plane.

Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and the LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the resin body covers the first and second lead frames and the LED chip, and has an upper surface with a surface roughness of 0.15 ?m or higher and a side surface with a surface roughness higher than the surface roughness of the upper surface.

Abstract: According to one embodiment, an LED package includes a first lead frame, a second lead frame, an LED chip, a wire, and a resin body. The first lead frame and the second lead frame are arranged with a space between each other. The LED chip is provided above the first lead frame and the second lead frame. The LED chip has a first terminal connected to the first lead frame and a second terminal connected to the second lead frame. The wire connects the first terminal to the first lead frame. The resin body covers the LED chip as well as a top surface, a part of a bottom surface, and a part of an edge surface of each of the first lead frame and the second lead frame. A remaining portion of each of the bottom surfaces and a remaining portion of each of the edge surfaces are exposed.

Abstract: According to one embodiment, an LED package includes first and second lead frames spaced from each other, and an LED chip. Each of the first and second lead frames includes a base portion and a plurality of extending portions extending from the base portion. A part of a lower surface of the base portion, side surfaces of the base portion, lower surfaces of the extending portions and side surfaces of the extending portions are covered by resin. A remaining part of the lower surface of the base portion and tip surfaces of the extending portions are not covered by resin. The part of the lower surface of the base portion includes a first edge of the first lead frame and a second edge of the second lead frame. The first edge and the second edge are opposed each other.

Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are made of a metal material, and disposed to be apart from each other. The LED chip is provided above the first and second lead frames, the LED chip having one terminal connected to the first lead frame and another terminal connected to the second lead frame. The resin body is made of a resin material having a shore D hardness of 25 or higher. In addition, the resin body covers the first and second lead frames and the LED chip. And, an appearance of the resin body is an appearance of the LED package.

Abstract: According to one embodiment, an LED module includes a substrate, an interconnect layer, a light emitting diode (LED) package, and a reflection member. The interconnect layer is provided on the substrate. The LED package is mounted on the interconnect layer. The reflection member is provided on a region in the substrate where the LED package is not mounted and has a property of reflecting light emitted from the LED package. The LED package includes a first lead frame, a second lead frame, an LED chip, and a resin body. The first lead frame and the second lead frame are arranged apart from each other on the same plane. The LED chip is provided above the first lead frame and the second lead frame, with one terminal connected to the first lead frame and one other terminal connected to the second lead frame.