Abstract: A method of double-exposure photolithography of a semiconductor wafer in the manufacture of integrated circuits is disclosed. The two exposures of the same positive photoresist layer are carried out using a binary photomask (25) having chrome regions (22) that define non-critical dimension features (6c) and also serve as protection for phase shift exposure of critical dimension features (6g). The phase shift photomask (23) includes apertures 200, 20&pgr; that expose the sides of the critical dimension feature (6g) with opposite phase light. The phase shift photomask (23) also includes an additional aperture (30) for double exposure of a region exposed by the binary photomask, for example as between a non-critical dimension feature (6c) and the end of a critical dimension feature (6g).

Abstract: A method of double-exposure photolithography of a semiconductor wafer in the manufacture of integrated circuits is disclosed. The two exposures of the same positive photoresist layer are carried out using a binary photomask (25) having chrome regions (22) that define non-critical dimension features (6c) and also serve as protection for phase shift exposure of critical dimension features (6g). The phase shift photomask (23) includes apertures 200, 20&pgr; that expose the sides of the critical dimension feature (6g) with opposite phase light. The phase shift photomask (23) also includes an additional aperture (30) for double exposure of a region exposed by the binary photomask, for example as between a non-critical dimension feature (6c) and the end of a critical dimension feature (6g).

Abstract: A method of double-exposure photolithography of a semiconductor wafer in the manufacture of integrated circuits is disclosed. The two exposures of the same positive photoresist layer are carried out using a binary photomask (25) having chrome regions (22) that define non-critical dimension features (6c) and also serve as protection for phase shift exposure of critical dimension features (6g). The phase shift photomask (23) includes apertures 200, 20&pgr;, that expose the sides of the critical dimension feature (6g) with opposite phase light. The phase shift photomask (23) also includes an additional aperture (30) for double exposure of a region exposed by the binary photomask, for example as between a non-critical dimension feature (6c) and the end of a critical dimension feature (6g).

Abstract: The present invention teaches a two-and-one-half-level resist process, wherein a first planarizing resist layer is applied, an anti-reflective coating (which need not be a photoresist itself) is applied, and then a top photoresist layer is applied. The top layer is patterned conventionally, at a wavelength which the anti-reflective coating absorbs, and a flood exposure (preferably in deep ultraviolet light) is then used to transfer this pattern to the bottom planarizing resist layer. Good patterning of non-planar surfaces despite topography is thus achieved, and pattern degradation due to spurious reflections (e.g., from an aluminum layer being patterned) is avoided.

Abstract: A dosimeter having a dielectric material such as sapphire wherein the efficiency as measured by mean drift distance and trapping efficiency is increased by making use of a dielectric material in which the total active impurity does not exceed 50 ppm and in which any one active impurity does not exceed 10 ppm.