Abstract: Thermally conductive heat transfer bodies are included in plastic packages to extend from the die pad and/or circuit chip to or near the surface of the package. Leakage is prevented by encapsulating the heat transfer body in a thin film of plastic and/or by arranging the interface between metal and plastic to be elongated and convoluted. The heat transfer body is attached to the die pad and/or lead frame to stabilize the body during molding and to aid in thermal communication between the chip and the heat transfer body. Air cavities and EMI shielding are provided by caps secured to the lead frames.

Abstract: Solderable connections are formed in a grid array pattern on the surface of a plastic package by modifying conventional lead frame assemblies so that the outer ends of the leads terminate at the bottom surface of the package and forming solder pads or balls on the ends of the leads. Conventional lead frames are used and, after modification, are encapsulated using conventional plastic packaging techniques to form plastic packages with solderable terminal ends arranged in an interconnection array on one surface of the package.

Abstract: The liquid phase epitaxial growth of a magnetic garnet film is obtained by providing a circulating flux solution of the material, wherein spaced apart zones are maintained at different temperatures, above and below the saturation point; and by placing a preheated substrate in contact with the supersaturated zone, wherein a suitable growth temperature is maintained. This system avoids the prior need for heating and cooling the entire solution as a single, thermally uniform zone, and thereby achieves a substantial savings in time which permits at least a ten-fold increase in production rates, without increasing manpower or capital investment.

Abstract: The disclosure relates to formation of polycrystalline silicon by the fluid bed process wherein seed crystals of silicon are entered into the reactor from the bottom thereof and by means of a pressurized feed, the product being removed from the reactor through a tube entering the reactor at its bottommost portion. The removed product passes through a closed line by gravity into a closed vessel, the vessel being movable to a crystal puller apparatus without handling or exposure. The closed line is also tapped, as desired, to remove product on-line for test during operation so that the system can be immediately shut down when improper product is detected without excessive loss of pure polycrystalline silicon. The polycrystalline silicon is fed from the transfer vessel to a melt from which crystals are to be pulled via an intermediate reservoir. The silicon is transferred from the vessel to the reservoir under pressure to prevent contamination thereof.

Abstract: Light emitting p-n junction diode elements in the form of small spheres having an outer layer of semiconductor material of one conductivity type and a subsurface layer of semiconductor material of an opposite conductivity type are mounted to one surface of an insulating substrate member in holes of a proper size to allow a portion of each diode element to protrude past the other surface of the substrate; metallic coatings on one surface of the substrate provide electrical contacts to the outer layers of the spheres and metallic coatings on the other surface of the substrate provide electrical contact to the subsurface semiconductor layer of the spheres in an area where the surface layer has been removed.