Patents by Inventor Gennady Panin

Gennady Panin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8787416
    Abstract: Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: July 22, 2014
    Assignee: Dongguk University Industry-Academic Cooperation Foundation
    Inventors: Sang Wuk Lee, Tae Won Kang, Gennady Panin, Hak Dong Cho
  • Publication number: 20120319083
    Abstract: Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.
    Type: Application
    Filed: December 21, 2010
    Publication date: December 20, 2012
    Applicant: Dongguk University Industry-Academic Cooperation F
    Inventors: Sang Wuk Lee, Tae Won Kang, Gennady Panin, Hak Dong Cho
  • Publication number: 20120314726
    Abstract: Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.
    Type: Application
    Filed: September 10, 2010
    Publication date: December 13, 2012
    Applicant: DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Sang Wuk Lee, Tae Won Kang, Gennady Panin, Hak Dong Cho
  • Publication number: 20120205606
    Abstract: Disclosed are an oxide-based nonvolatile memory with superior resistive switching characteristics and a method for preparing the same. More particularly, the disclosure relates to a nonvolatile memory device having a metal/reduced graphene oxide (r-GO) thin film/metal structure and a method for preparing the same.
    Type: Application
    Filed: October 25, 2011
    Publication date: August 16, 2012
    Applicant: Dongguk University Industry-Academic Cooperation Foundation
    Inventors: Sang Wuk Lee, Tae Won Kang, Gennady Panin, Olesya Kapitanova