Patents by Inventor Genshi Okuda

Genshi Okuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of semiconductor device including chemical mechanical polishing
    Patent number: 8901743
    Abstract: A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.
    Type: Grant
    Filed: January 8, 2013
    Date of Patent: December 2, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Tomiyasu Saito, Tatsuya Mise, Hiromichi Ichikawa, Tetsuya Takeuchi, Genshi Okuda
  • FABRICATION OF SEMICONDUCTOR DEVICE INCLUDING CHEMICAL MECHANICAL POLISHING
    Publication number: 20130277859
    Abstract: A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.
    Type: Application
    Filed: January 8, 2013
    Publication date: October 24, 2013
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Tomiyasu Saito, Tatsuya Mise, Hiromichi Ichikawa, Tetsuya Takeuchi, Genshi Okuda