Patents by Inventor Genzo Momma
Genzo Momma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10497734Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: GrantFiled: June 13, 2016Date of Patent: December 3, 2019Assignee: CANON KABUSHIKI KAISHAInventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Publication number: 20160284756Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: ApplicationFiled: June 13, 2016Publication date: September 29, 2016Inventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Patent number: 9397131Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: GrantFiled: March 4, 2015Date of Patent: July 19, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Patent number: 9293493Abstract: A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.Type: GrantFiled: February 1, 2012Date of Patent: March 22, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Masaki Kurihara, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Taro Kato, Genzo Momma
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Patent number: 9263487Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.Type: GrantFiled: June 24, 2014Date of Patent: February 16, 2016Assignee: Canon Kabushiki KaishaInventors: Taro Kato, Mineo Shimotsusa, Hiroaki Sano, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Genzo Momma
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Publication number: 20150179694Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: ApplicationFiled: March 4, 2015Publication date: June 25, 2015Inventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Patent number: 9000343Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: GrantFiled: June 23, 2011Date of Patent: April 7, 2015Assignee: Canon Kabushiki KaishaInventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Patent number: 8878115Abstract: A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.Type: GrantFiled: February 1, 2012Date of Patent: November 4, 2014Assignee: Canon Kabushiki KaishaInventors: Mineo Shimotsusa, Taro Kato, Yasuhiro Sekine, Mahito Shinohara, Takeshi Ichikawa, Genzo Momma
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Publication number: 20140306309Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.Type: ApplicationFiled: June 24, 2014Publication date: October 16, 2014Inventors: Taro Kato, Mineo Shimotsusa, Hiroaki Sano, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Genzo Momma
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Patent number: 8817144Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.Type: GrantFiled: February 2, 2012Date of Patent: August 26, 2014Assignee: Canon Kabushiki KaishaInventors: Taro Kato, Mineo Shimotsusa, Hiroaki Sano, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Genzo Momma
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Publication number: 20130092822Abstract: The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.Type: ApplicationFiled: June 23, 2011Publication date: April 18, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Takeshi Ichikawa, Mineo Shimotsusa, Genzo Momma
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Publication number: 20120199725Abstract: A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion.Type: ApplicationFiled: February 1, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Mineo Shimotsusa, Taro Kato, Yasuhiro Sekine, Mahito Shinohara, Takeshi Ichikawa, Genzo Momma
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Publication number: 20120200751Abstract: A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens.Type: ApplicationFiled: February 2, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Taro Kato, Mineo Shimotsusa, Hiroaki Sano, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Genzo Momma
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Publication number: 20120200728Abstract: A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other.Type: ApplicationFiled: February 1, 2012Publication date: August 9, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Masaki Kurihara, Takeshi Ichikawa, Yasuhiro Sekine, Mahito Shinohara, Taro Kato, Genzo Momma
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Patent number: 7270759Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.Type: GrantFiled: November 15, 2005Date of Patent: September 18, 2007Assignee: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Momma, Masato Kamiichi
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Publication number: 20060068570Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.Type: ApplicationFiled: November 15, 2005Publication date: March 30, 2006Applicant: CANON KABUSHIKI KAISHAInventors: Yukihiro Hayakawa, Genzo Momma, Masato Kamiichi
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Patent number: 6964471Abstract: To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 ?/? to 400 ?/?, and has a thickness of 30 nm to 80 nm.Type: GrantFiled: October 16, 2002Date of Patent: November 15, 2005Assignee: Canon Kabushiki KaishaInventors: Seiichi Tamura, Genzo Momma, Yukihiro Hayakawa, Yoshinori Kawasaki
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Patent number: 6799839Abstract: A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.Type: GrantFiled: October 18, 2002Date of Patent: October 5, 2004Assignee: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Momma
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Publication number: 20030081068Abstract: A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.Type: ApplicationFiled: October 18, 2002Publication date: May 1, 2003Applicant: Canon Kabushiki KaishaInventors: Yukihiro Hayakawa, Genzo Momma
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Publication number: 20030076384Abstract: To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 &OHgr;/□ to 400 &OHgr;/□, and has a thickness of 30 nm to 80 nm.Type: ApplicationFiled: October 16, 2002Publication date: April 24, 2003Inventors: Seiichi Tamura, Genzo Momma, Yukihiro Hayakawa, Yoshinori Kawasaki