Abstract: A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.

Abstract: A method for temporary wafer bonding employs an addition reaction curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a solvent. The film prepared by curing the composition is removable with an etching solution.

Abstract: A method for adhering substrates using gray-scale photolithography includes: (a) applying a photopatternable corn-position to a surface of a substrate to form a film; (b) exposing a portion of the film to radiation having a wavelength of from 150 to 800 nm through a gray-scale photomask to produce an exposed film having non-exposed regions covering at least a portion of the surface; (c) heating the exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the nonexposed regions are soluble in the developing solvent; (d) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (e) heating the patterned film for an amount of time sufficient to form a cured patterned film having a surface; (f) activating the surface of the cured patterned film and a surface of an adherend; (g) contacting the activated surface of the cured patterned film with the activated surface of the adherend.

Abstract: A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the nonexposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer, and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and a base.

Abstract: A method of preparing a planar optical waveguide assembly, comprising the steps of: (i) applying a silicone composition to a surface of a substrate to form a silicone film; (ii) exposing at least one selected region of the silicone film to radiation having a wavelength of from 150 to 800 nm to produce a partially exposed film having at least one exposed region and at least one non-exposed region; (iii) removing the non-exposed region of the partially exposed film with a developing solvent to form a patterned film; and (iv) heating the patterned film for an amount of time sufficient to form at least one silicone core having a refractive index of from 1.3 to 1.7 at 23° C. for light having a wavelength of 589 nm; wherein the substrate has a refractive index less than the refractive index of the silicone core.

Abstract: A planar optical waveguide assembly prepared by a method comprising the steps of (i) applying a curable polymer composition to a surface of a substrate to form a polymer film; (ii) curing the polymer film to form a lower clad layer; (iii) applying a silicone composition to the lower clad layer to form a silicone film; (iv) exposing at least one selected region of the silicone film to radiation having a wavelength of from 150 to 800 nm to produce a partially exposed film having at least one exposed region and at least one non-exposed region; (v) removing the non-exposed region of the partially exposed film with a developing solvent to form a patterned film; and (vi) heating the patterned film for an amount of time sufficient to form at least one silicone core having a refractive index of from 1.3 to 1.7 at 23° C. for light having a wavelength of 589 nm; wherein the lower clad layer has a refractive index less than the refractive index of the silicone core.

Abstract: A method for creating adhesion includes plasma treating two substrates and thereafter contacting the substrates. The method can be used on a variety of dry surfaces. The method is used to adhere nonadhesive surfaces such as a cured silicone with a ceramic or semiconductor.