Abstract: A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers.

Abstract: A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas.

Abstract: A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas.

Abstract: A memory device includes a plurality of memory cells each including a recordable layer between two metal layers, the recordable layer including a first sub-cell and a second sub-cell. Each memory cell is constructed and designed to change from an as-deposited state to an initialized state upon application of an initialization signal, from the initialized state to a first inscribed state upon application of a first write signal, and from the initialized state to a second inscribed state upon application of a second write signal. The memory cell has a resistor-like current-voltage (I-V) characteristic when in the as-deposited state, a diode-like I-V characteristic when in the initialized state, and resistor-like I-V characteristics when in the first and second inscribed states for voltages within a predetermined range.

Abstract: A memory device includes memory cells each having a recordable layer between two metal layers, each memory cell being constructed and designed to change from a first state to a second state upon application of an initialization signal, and change from the second state to a third state upon application of a write signal. For a voltage within a specified range that is applied across the two metal layers, the memory cell has a lower resistance in the first state than in the second state, and has a higher resistance in the second state than in the third state.

Abstract: A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas.

Abstract: A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas.

Abstract: A heat exchange structure includes a plurality of elongated air ducts. The heat exchange structure has an exterior heat exchange surface and interior heat exchange surfaces, the interior surfaces being in the elongated air ducts. The heat exchange structure includes a plurality of heat generators that are distributed on the exterior heat exchange surface along an elongated direction of the air ducts, in which air flowing in the air duct is heated successively by heat from the heat generators, and air flow in the air duct is enhanced by buoyancy of heated air.

Abstract: A heat exchange structure includes a plurality of elongated air ducts. The heat exchange structure has an exterior heat exchange surface and interior heat exchange surfaces, the interior surfaces being in the elongated air ducts. The heat exchange structure includes a plurality of heat generators that are distributed on the exterior heat exchange surface along an elongated direction of the air ducts, in which air flowing in the air duct is heated successively by heat from the heat generators, and air flow in the air duct is enhanced by buoyancy of heated air.

Abstract: A heat exchange structure includes elongated air ducts. Each air duct has a first opening and a second opening at two ends of the air duct to allow air to enter and exit the air duct, respectively. The heat exchange structure includes an exterior heat exchange surface and interior heat exchange surfaces, in which the exterior heat exchange surface is configured to receive thermal energy from heat generators that are mounted on the exterior heat exchange surface, and the exterior heat exchange surface dissipates a portion of the thermal energy received from the heat generators and transfers another portion of the thermal energy to the interior heat exchange surfaces. The interior heat exchange surfaces are in the elongated air ducts and configured to exchange thermal energy with air flowing in the air ducts, enhancing air flow in the air ducts by buoyancy of heated air.

Abstract: A ceramic composition including a first ceramic material and a second ceramic material that is in the form of nano-, submicron-, or micron-sized particles, in which the first ceramic material has a lower melting point than the second ceramic material, and, when the first ceramic material melts into a liquid and the second ceramic material remains particulate, the second ceramic material floats at the top of the liquid. Also disclosed is a variant of this composition including a first ceramic material and a second ceramic material, in which the second ceramic material has a melting point higher than the first ceramic material, and, when the first ceramic material melts into a liquid, the second ceramic material partially or completely dissolves in the liquid.

Abstract: A heat exchange structure includes elongated air ducts. Each air duct has a first opening and a second opening at two ends of the air duct to allow air to enter and exit the air duct, respectively. The heat exchange structure includes an exterior heat exchange surface and interior heat exchange surfaces, in which the exterior heat exchange surface is configured to receive thermal energy from heat generators that are mounted on the exterior heat exchange surface, and the exterior heat exchange surface dissipates a portion of the thermal energy received from the heat generators and transfers another portion of the thermal energy to the interior heat exchange surfaces. The interior heat exchange surfaces are in the elongated air ducts and configured to exchange thermal energy with air flowing in the air ducts, enhancing air flow in the air ducts by buoyancy of heated air.

Abstract: This invention relates to a ceramic composite having a ceramic substrate and a ceramic layer disposed on the top surface of the substrate. The layer contains a multiplicity of nano-sized or micron-sized stalagmites, a multiplicity of nano-sized or micron-sized stalactites, a multiplicity of nano-sized or micron-sized columns, or a combination thereof. The invention also relates to a composition for and a method of making the ceramic composite.

Abstract: A light source includes a light emitting diode (LED) module having a continuous substrate, a layer of n-type semiconductor material formed above the substrate, and a layer of p-type semiconductor material formed above the n-type semiconductor material. A p-n junction is formed between the p-type and n-type semiconductor materials. The p-type and n-type semiconductor materials are selected to emit light at the p-n junction when an electric current flows through the p-n junction. The LED module includes a plurality of electric contacts connected to the p-type semiconductor material, and at least one electric contact connected to the n-type semiconductor material. The electric contacts are configured to pass electric current through a plurality of regions in the p-n junction such that the plurality of regions have higher electric current densities and emit light brighter than areas outside of the plurality of regions.

Abstract: A memory device includes a layer of material structure and a plurality of memory cells each formed using a corresponding different portion of the layer. Each memory cell is constructed and designed to change a material property of the corresponding portion of the layer upon application of an electrical write signal. The memory device includes circuitry for outputting a signal indicating presence or absence of a change of the material property in the memory cells.

Abstract: A method for efficient lighting includes supplying power to a light source to control the intensity of light emitted from the light source according to an intensity waveform. The amplitude of the waveform over one period is at a high level for a first time interval and at or below a low level for a second time interval. The method includes selecting durations of the first time interval according to a first characteristic of human visual perception and selecting the second time interval according to a second characteristic of human visual perception.

Abstract: A recordable medium includes an inscription layer and a contrast enhancing layer. The inscription layer has at least two sub-layers that combine upon application of a write power, the inscription layer having a reflectivity R1 before application of the write power and a reflectivity R2 after application of the write power. The contrast enhancing layer does not combine with the sub-layers of the inscription layer upon application of the write power. The contrast enhancing layer and the inscription layer together have a reflectivity R3 before application of the write power and a reflectivity R4 after application of the write power, and |R4?R3|>|R2?R1|.

Abstract: A nanostructured tungsten carbide bulk material, sintered from tungsten carbide and metal such as cobalt nano-powders, comprises a tungsten carbide and a metallic binder such as cobalt phases. The tungsten carbide phase has nanostructures comprising a plurality of dislocations, twins, stacking faults, dislocation cells, nano-subgrains with preferred orientation or texture, or a combination thereof.

Abstract: A thin-film optical recording medium and compatible materials is disclosed. When the transparent layer and the reflecting layer of the present invention are exposed to a light beam, the two layers react to form a semi-transparent reflective alloy/compound area. The presence of such area (1) decreases the effective optical thickness of the transparent layer and/or (2) forms a region of changed optical n & k and/or (3) changes the optical polarization angle. At least one of the above three effects produces an optical contrast before and after the recording from which the signal modulation required for reading the optical media can be derived. The present invention allows high-density, high-resolution, high-speed recording of data that is highly compatible with the full visible-light spectrum.

Abstract: This invention provides a concept of using porous materials on ceramic substrate planarization. This planarized substrate consists of a ceramic substrate, a buffer layer, and a nanostructure layer. The ceramic substrate provides structural strength and surface-mount capability. The buffer layer provides the adhesion between the substrate and the nanostructure layer. The nanostructure layer provides the required surface smoothness of the ceramic substrates for performing thin-film processing techniques and enhances adhesion for metallization and electronic materials.