Abstract: An embodiment walk-in seat locking device for a vehicle includes a rear link including a first sector gear, the rear link having a first end portion hinge-fastened to a rear portion of a seat cushion frame and a second end portion hinge-fastened to a rear portion of a seat rail, a locking link including a second sector gear engageable with the first sector gear, wherein the second sector gear is on a rear portion of the locking link and is hinge-fastened to the seat cushion frame, a lever having a first end portion to which a cable is connected and a second end portion hinge-fastened to the seat cushion frame, a first locking cam having a first end portion coaxially connected to the lever, and a second locking cam having a first end portion coaxially connected to the lever and the first locking cam.

Abstract: A bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.

Abstract: A steroid sulfatase inhibitor provided by the present invention is a safe substance without toxicity and adverse effects, has inhibitory activity against various viruses, and thus is capable of effectively preventing, ameliorating, or treating viral infections or diseases caused by viral infections.

Abstract: Disclosed are an electrically conductive hydrogel having a graphene network and a method for fabricating the same. The electrically conductive hydrogel is fabricated by thermal annealing of granular hydrogel, and thus it has a porous structure, excellent electrical conductivity, and improved compressive modulus and yield stress. Accordingly, the electrically conductive hydrogel may be advantageously used in biomedical applications, such as scaffolds for tissue engineering, bioelectrodes, and biosensors.

Abstract: An event log management technique may include determining a new event associated with a storage device has occurred, determining a new event log can be stored in an event log chunk stored in an event log buffer, and deleting a number of old event logs starting from an oldest event log among old event logs of the event log chunk stored in the event log buffer if the new event log can be stored in the event log chunk stored in the event log buffer. The number of old event logs being deleted corresponds to a size of a new event log associated with the new event. The technique may also include storing the new event log starting at a start position of the oldest event log.

Abstract: Provided is an electric oven in which, when a surface temperature of an opening or closing door reaches a set temperature while a body heats food with the opening or closing door closed, an alarm design visible with the naked eyes is displayed on a front surface of the opening or closing door by an alarm display portion so as to prevent burns or accidents caused by negligence of a user.

Abstract: Disclosed herein are an apparatus and method for task-adaptive neural network retrieval based on meta-contrastive learning. The apparatus for task-adaptive neural network retrieval based on meta-contrastive learning includes: memory configured to store a database including a learning model pool consisting of a plurality of datasets and neural networks pre-trained on the datasets and also store a program for task-adaptive neural network retrieval based on meta-contrastive learning; and a controller configured to perform task-adaptive neural network retrieval based on meta-contrastive learning by executing the program. In this case, the controller learns a cross-modal latent space for datasets and neural networks trained on the datasets by calculating the similarity between each dataset and a neural network trained on the dataset while considering constraints included in any one task previously selected from the database, thereby retrieving an optimal neural network.

Abstract: Disclosed is a tire with reduced cavity noise including an adhesive agent layer applied to an inside an inner liner, and a sound absorber layer attached to the adhesive agent layer, wherein the adhesive agent layer includes polyether containing an alkoxysilane substituent group in a main chain, rather than, at an end. The tire with reduced cavity noise is stable without causing separation of a sound absorber even heating and deformation during driving.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: Disclosed is a tire with reduced cavity noise including an adhesive agent layer applied to an inside of an inner liner and a sound absorber layer attached to the adhesive agent layer, wherein the adhesive agent layer includes poly(ether-urethane) containing alkoxysilane at both ends thereof. The tire with reduced cavity noise is stable without causing separation of a sound absorber even upon heating and deformation during driving.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

Abstract: A variable resistance memory device includes first conductive lines positioned above a substrate. Each of the first conductive lines extends in a first direction and a second direction. Second conductive lines extend in the first direction and the second direction. The second conductive lines are positioned above the first conductive lines. A memory is positioned between the first and second conductive lines. The memory unit overlaps the first and second conductive lines in a third direction. The memory unit includes a first electrode, a variable resistance pattern positioned on the first electrode, and a second electrode positioned on the variable resistance pattern. A selection pattern is positioned on each memory unit. A third electrode is positioned above the selection pattern. The third electrode is in direct contact with a lower surface of each of the second conductive lines.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: Disclosed is a tire with reduced cavity noise including an adhesive agent layer applied to an inside of an inner liner and a sound absorber layer attached to the adhesive agent layer, wherein the adhesive agent layer includes poly(ether-urethane) containing alkoxysilane at both ends thereof. The tire with reduced cavity noise is stable without causing separation of a sound absorber even upon heating and deformation during driving.