Abstract: Techniques are presented for the application of neural networks to the fabrication of integrated circuits and electronic devices, where example are given for the fabrication of non-volatile memory circuits and the mounting of circuit components on the printed circuit board of a solid state drive (SSD). The techniques include the generation of high precision masks suitable for analyzing electron microscope images of feature of integrated circuits and of handling the training of the neural network when the available training data set is sparse through use of a generative adversary network (GAN).

Abstract: An environmental safety system may comprise a plurality of first sensors each located at a predetermined physical location of a traffic intersection and with a predetermined orientation. The system may have a memory storing executable instructions. The system may have one or more processors in communication with the plurality of first sensors and the memory. The one or more processors may be programmed by the executable instructions. The system may receive first sensor data captured at a time point and by the plurality of first sensors. The system may determine values of one or more parameters of an object of interest within a threshold distance of the traffic intersection using the first sensor data. The system may generate an information object comprising the values of the one or more parameters of the object of interest, the time point, and a signature of the information object. The system may transmit, via a communication network, the information object.

Abstract: A system comprising: a first module comprising a first sensor, capable of performing biometric sensing at a first location on a patient; and a second module comprising a second sensor, capable of performing biometric sensing at a second location on the patient. The first module comprises a transmitter for transmitting first sensor data, the first sensor data comprising sensing information obtained by the first sensor.

Abstract: An environmental safety system may include first sensors each located at a predetermined physical location of a physical location and with a predetermined orientation. The system may receive first sensor data captured by the plurality of first sensors. The system may also determine values of parameters of an object within a threshold distance of the physical location using the first sensor data. The values of the parameters of the object may be transmitted to a vehicle approaching the physical location. The vehicle may receive second sensor data captured by second sensors in the vehicle. An optimized navigation of the vehicle approaching the physical location may be determined based on the values of the parameters of the object and the second sensor data. A driving action may be provided to the vehicle based on the optimized navigation of the vehicle.

Abstract: Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm?2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm?2 or less, or 100 cm?2 or less, or 10 cm?2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

Abstract: Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm?2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm?2 or less, or 100 cm?2 or less, or 10 cm?2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

Abstract: Structures and related techniques for singulating GaN-on-Si wafers are disclosed. In one aspect, a semiconductor wafer includes a silicon layer, and a gallium nitride (GaN) layer disposed on the silicon layer and defining a plurality of trenches that each extend to the silicon layer. In another aspect, the GaN layer includes one or more gallium nitride layers of different compositions. In yet another aspect, the wafer includes a plurality of dielectric layers disposed on the GaN layer. In yet another aspect, each of the plurality of trenches has a depth that is equal to a sum of a thickness of the GaN layer and a thickness of the plurality of the dielectric layers.

Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.

Abstract: An electronic device includes a substrate and a first gallium nitride (GaN) transistor formed on a first semiconductor die that is electrically coupled to the substrate. A second GaN transistor is formed on a second semiconductor die and is also electrically coupled to the substrate. An integral heat spreader is thermally coupled to the first and the second gallium nitride semiconductor dies and is electrically coupled to the substrate. A first bias voltage is applied to the first GaN transistor via the integral heat spreader and a second bias voltage is applied to the second GaN transistor via the integral heat spreader.

Abstract: A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×1014 atoms/cc to 10×1013 atoms/cc, boron with an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium with an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.

Abstract: A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.

Abstract: An environmental safety system may comprise a plurality of first sensors each located at a predetermined physical location and with a predetermined orientation. The system may receive first sensor data captured at a plurality of time points and by the plurality of first sensors. The system may also determine values of one or more parameters of an object within a threshold distance of the physical location at a last time point of the plurality of time points using the first sensor data. The values of the one or more parameters of the object may comprise a stationary status of the object at the last time point. The values of the one or more parameters of the object may be transmitted to a vehicle approaching the physical location. The vehicle may receive second sensor data captured by a plurality of second sensors in the vehicle. An optimized navigation of the vehicle approaching the physical location may be determined based on stationary status of the object at the last time point and the second sensor data.

Abstract: A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.

Abstract: A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Abstract: Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm?2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm?2 or less, or 100 cm?2 or less, or 10 cm?2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

Abstract: A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 ?m, and the pits have a maximum depth of 6.0 ?m. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.

Abstract: A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Abstract: An environmental safety system may comprise a plurality of first sensors each located at a predetermined physical location of a traffic intersection and with a predetermined orientation. The system may have a memory storing executable instructions. The system may have one or more processors in communication with the plurality of first sensors and the memory. The one or more processors may be programmed by the executable instructions. The system may receive first sensor data captured at a time point and by the plurality of first sensors. The system may determine values of one or more parameters of an object of interest within a threshold distance of the traffic intersection using the first sensor data. The system may generate an information object comprising the values of the one or more parameters of the object of interest, the time point, and a signature of the information object.

Abstract: An environmental safety system may comprise a plurality of first sensors each located at a predetermined physical location and with a predetermined orientation. The system may receive first sensor data captured at a plurality of time points and by the plurality of first sensors. The system may also determine values of one or more parameters of an object within a threshold distance of the physical location at a last time point of the plurality of time points using the first sensor data. The values of the one or more parameters of the object may comprise a stationary status of the object at the last time point. The values of the one or more parameters of the object may be transmitted to a vehicle approaching the physical location. The vehicle may receive second sensor data captured by a plurality of second sensors in the vehicle. An optimized navigation of the vehicle approaching the physical location may be determined based on stationary status of the object at the last time point and the second sensor data.

Abstract: An environmental safety system may comprise a plurality of first sensors each located at a predetermined physical location of a physical location and with a predetermined orientation. The system may receive first sensor data captured by the plurality of first sensors. The system may also determine values of one or more parameters of an object within a threshold distance of the physical location using the first sensor data. The values of the one or more parameters of the object may be transmitted to a vehicle approaching the physical location. The vehicle may receive second sensor data captured by a plurality of second sensors in the vehicle. An optimized navigation of the vehicle approaching the physical location may be determined based on the values of the one or more parameters of the object and the second sensor data. A driving action may be provided to the vehicle based on the optimized navigation of the vehicle.