Abstract: A coated substrate comprising a nanostructure film formed on a non-planar substrate is described. The coated substrate may further be compliant, optically transparent and/or electrically conductive. Fabrication methods thereof are also described.

Abstract: A transparent and conductive film comprising at least one network of graphene flakes is described herein. This film may further comprise an interpenetrating network of other nanostructures, a polymer and/or a functionalization agent(s).

Abstract: A pixel electrode is provided, comprising a nanostructure-film deposited over an active matrix substrate, such that the pixel electrode makes electrical contact with an underlying layer. Similarly, auxiliary data pads and auxiliary gate pads are provided, which also comprise nanostructure-films deposited over an active matrix substrate, such that they make electrical contact with underlying layers.

Abstract: Touch screen displays comprising at least one nanostructure-film, and fabrication methods thereof, are discussed. Nanostructure-films may comprise, for example, a network(s) of nanotubes, nanowires, nanoparticles and/or graphene flakes. Such films are preferably at least semi-transparent and relatively flexible, making them well-suited for use in a variety of touch screen applications.

Abstract: An optoelectronic device comprising at least one nanostructure-film electrode is discussed. The optoelectronic device may further comprise a different material, such as a polymer, to fill pores in the nanostructure-film. Additionally or alternatively, the optoelectronic device may comprise an electrode grid superimposed on the nanostructure-film.

Abstract: An optoelectronic device comprising at least one nanostructure-film electrode and fabrication methods thereof are discussed. The optoelectronic device may further comprise a different material to fill in porosity in the nanostructure-film. Additionally, the optoelectronic device may be a solar cell, comprising at least one of a variety of photosensitive active layers.

Abstract: The disclosure provided herein describes methods and devices for the detection of analytes and/or the characterization of interactions between analytes and compositions capable of binding the analytes. Embodiments of the invention allow the identification and/or characterization of analytes by monitoring the electronic properties of sensors having electronic circuits coupled to compositions capable of binding the analytes under different sensing conditions.

Abstract: A doped nanostructure network, devices incorporating a doped nanostructure network and fabrication methods thereof are described. Dopant may be deposited by a solution-based method, and the dopant is preferably stable over an extended period of time. Networks according to embodiments of the present invention can exhibit conductivities in excess of 4000 S/cm.

Abstract: An electronic system for selectively detecting and identifying a plurality of chemical species, which comprises an array of nanostructure sensing devices, is disclosed. Within the array, there are at least two different selectivities for sensing among the nanostructure sensing devices. Methods for fabricating the electronic system are also disclosed. The methods involve modifying nanostructures within the devices to have different selectivity for sensing chemical species. Modification can involve chemical, electrochemical, and self-limiting point defect reactions. Reactants for these reactions can be supplied using a bath method or a chemical jet method. Methods for using the arrays of nanostructure sensing devices to detect and identify a plurality of chemical species are also provided.

Abstract: A transparent and conductive film comprising at least one network of graphene flakes is described herein. This film may further comprise an interpenetrating network of other nanostructures, a polymer and/or a functionalization agent(s). A method of fabricating the above device is also described, and may comprise depositing graphene flakes in solution and evaporating solvent therefrom.

Abstract: A nanotube device is configured as an electronic sensor for a target DNA sequence. A film of nanotubes is deposited over electrodes on a substrate. A solution of single-strand DNA is prepared so as to be complementary to a target DNA sequence. The DNA solution is deposited over the electrodes, dried, and removed from the substrate except in a region between the electrodes. The resulting structure includes strands of the desired DNA sequence in direct contact with nanotubes between opposing electrodes, to form a sensor that is electrically responsive to the presence of target DNA strands. Alternative assay embodiments are described which employ linker groups to attach ssDNA probes to the nanotube sensor device.

Abstract: Active, electrical, electronic and optoelectronic components and structures are fabricated to include composites containing electrically conductive nanostructures as part thereof. These nanostructures include nanowires, nanofibres, nanoribbons, nanoplates or nanotubes as single structures or an assembly of multiple structures. They are composed of carbon or other conductive materials.

Abstract: An electrode for an electro-optic device according to an embodiment of this invention has a network of carbon nanotubes. The electrode has an electrical conductivity of at least 600 S/cm and a transmittance for 550 nm light of at least 80%. An average thickness of the network of carbon nanotubes is at least 2 nm. A method of producing a device according to an embodiment of this invention includes forming a film of carbon nanotubes on a filter surface by vacuum filtration, pressing a stamp against at least a portion of the film of carbon nanotubes to cause a portion of the film of carbon nanotubes to adhere to the stamp, and pressing the stamp having the portion of carbon nanotubes adhered thereto against a substructure of the device to cause the network of carbon nanotubes to be transferred to a surface of the substructure upon removal of the stamp.

Abstract: An electrode for an electro-optic device according to an embodiment of this invention has a network of carbon nanotubes. The electrode has an electrical conductivity of at least 600 S/cm and a transmittance for 550 nm light of at least 80%. An average thickness of the network of carbon nanotubes is at least 2 nm. A method of producing a device according to an embodiment of this invention includes forming a film of carbon nanotubes on a filter surface by vacuum filtration, pressing a stamp against at least a portion of the film of carbon nanotubes to cause a portion of the film of carbon nanotubes to adhere to the stamp, and pressing the stamp having the portion of carbon nanotubes adhered thereto against a substructure of the device to cause the network of carbon nanotubes to be transferred to a surface of the substructure upon removal of the stamp.

Abstract: An electrode for an electro-optic device according to an embodiment of this invention has a network of carbon nanotubes. The electrode has an electrical conductivity of at least 600 S/cm and a transmittance for 550 nm light of at least 80%. An average thickness of the network of carbon nanotubes is at least 2 nm. A method of producing a device according to an embodiment of this invention includes forming a film of carbon nanotubes on a filter surface by vacuum filtration, pressing a stamp against at least a portion of the film of carbon nanotubes to cause a portion of the film of carbon nanotubes to adhere to the stamp, and pressing the stamp having the portion of carbon nanotubes adhered thereto against a substructure of the device to cause the network of carbon nanotubes to be transferred to a surface of the substructure upon removal of the stamp.

Abstract: An electrode for an electro-optic device according to an embodiment of this invention has a network of carbon nanotubes. The electrode has an electrical conductivity of at least 600 S/cm and a transmittance for 550 nm light of at least 80%. An average thickness of the network of carbon nanotubes is at least 2 nm. A method of producing a device according to an embodiment of this invention includes forming a film of carbon nanotubes on a filter surface by vacuum filtration, pressing a stamp against at least a portion of the film of carbon nanotubes to cause a portion of the film of carbon nanotubes to adhere to the stamp, and pressing the stamp having the portion of carbon nanotubes adhered thereto against a substructure of the device to cause the network of carbon nanotubes to be transferred to a surface of the substructure upon removal of the stamp.

Abstract: A nanostructure sensing device includes a substrate, a nanotube disposed over the substrate, and at least two conductive elements electrically connected to the nanotube. A electric current on the order of about 10 ?A, or greater, is passed through the conductive elements and the nanotube. As a result, the nanotube heats up relative to the substrate. In the alternative, some other method may be used to heat the nanotube. When operated as a sensor with a heated nanotube, the sensor's response and/or recovery time may be markedly improved.

Abstract: According to the invention, nanostructured storage materials are provided for storing hydrogen. The nanostructured storage materials can include a network of light elements, such as Be, B, C, N, O, F, Mg, P, S, and Cl, coupled with sp2 bonds. The hydrogen adsorption to the nanostructured storage material is improved by modifying the sp2 bonds. The sp2 bonds can be modified by forming the nanostructured storage material from the above light elements, possibly with a shape other than a planar layer, and by introducing defects. A chemical vapor deposition technique can be used for the synthesis, where doping gases are included into the flow. Methods for forming the nanostructured storage material with defects include removing light elements from the nanostructured storage material by irradiation with electrons, neutrons, ions, gamma rays, X-rays, and microwaves.

Abstract: Semiconductor devices where networks of molecular nanowires (or nanofibers) are used as the semiconductor material. Field effect transistors are disclosed where networks of molecular nanowires are used to provide the electrical connection between the source and drain electrodes. The molecular nanowires have diameters of less than 500 nm and aspect ratios of at least 10. The molecular nanowires that are used to form the networks can be single element nanowires, Group III-V nanowires, Group II-VI nanowires, metal oxide nanowires, metal chalcogenide nanowires, ternary chalcogenide nanowires and conducting polymer nanowires.

Abstract: A nanoelectronic device is combined with a cellular membrane component to provide a sensor for biomolecules or to provide information about the structure of the membrane. The nanoelectronic device may comprise a network of randomly-oriented nanotubes, or other nanostructure, arranged on a substrate with adjacent electrodes so as to operate as a field-effect transistor sensor or as a capacitive sensor. A cellular membrane is disposed over the nanostructure element.