Abstract: A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

Abstract: Methods and apparatus for transferring heat according to various aspects of the present invention operate in conjunction with a heat source on a substrate. In one embodiment, a lid is adapted to engage the substrate. The lid may comprise a thermally conductive rigid body and one or more hardstops configured to limit a bond line distance between the rigid body and the heat source. A thermal interface material may be disposed in the bond line between the heat source and the lid. The thermal interface material may be adapted to provide a thermally conductive adhesive bond between the lid and the heat source.

Abstract: A semiconductor device thermal connection used to remove heat from a semiconductor device, such as an integrated circuit, includes a metallic barrier layer on the semiconductor device, and a high thermal conductivity material on the metallic barrier layer that joins the semiconductor device to a thermal heat spreader. The metallic barrier layer may be one or more sputtered layers, and the high thermal conductivity material may be a metallic material, for instance including indium, that is soldered onto the sputtered material. The high thermal conductivity material may form a primary thermal connection in conducting heat away from the semiconductor device. A secondary thermal connection may be made between the heat spreader and a heat sink. The secondary thermal connection may include a compressible solid carbon fiber material. A diaphragm may be used to contain the carbon fiber material, to prevent carbon fibers from coming into contact with the semiconductor device.

Abstract: A foil bearing assembly for use in a gas turbine engine is provided. The assembly includes an annular bearing carrier mounted to the housing of the engine. An annular foil carrier disposed within the bearing carrier and carrying a plurality of overlapping foils that engage an outer surface of a journal. The journal is mounted to the rotating assembly of the engine to define a cavity. Disposed in the cavity is a showerhead having an inlet for receiving a flow of cooling air and a plurality of orifices for providing impingement cooling of the inner surface of the journal. The use of a showerhead in a thrust foil bearing is also disclosed.