Abstract: A holder for wafer-like articles is formed by providing a platform having a wafer-like article facing surface that includes at least one annular groove therein. The annular groove has a ceiling surface therein which is provided with an opening. A gas conducting conduit is connected to the opening. A gas, which introduced into the conduit, exits the conduit through the opening. By choosing a particular orientation of the conduit relative to the annular groove, the gas exiting the opening can be caused to circulate in a clockwise or counter clockwise fashion. The circular flow of gas causes the formation of a vortex adjacent to the article facing surface. A wafer-like article may be held in a suspended state adjacent to the wafer-like article facing surface without contact by the vortex and the gas flowing between the wafer-like article and the article facing surface.

Abstract: The electrode (11) of the present invention is used in a Plasma Assisted Chemical Etching process and comprises an inner member (47) surrounded by an outer member (45) defining a gap (77) therebetween such that a gas can flow therethrough. In the preferred embodiment, the inner member (47) and the concentric outer member (45) are both cylindrical in shape, therefore, the gap (77) has an annular configuration. A vertical ducting system is bored within the inner member (47) and directly or indirectly intersects the annular gap (77).