Patents by Inventor Georges Bervin

Georges Bervin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for transferring a predetermined pattern reducing proximity effects
    Patent number: 7897308
    Abstract: A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: March 1, 2011
    Assignees: Commissariat a l'Energie Atomique, Freescale Semiconductor, Inc.
    Inventors: Laurent Pain, Serdar Manakli, Georges Bervin
  • Method for Transferring a Predetermined Pattern Reducing Proximity Effects
    Publication number: 20090162789
    Abstract: A method for transferring a predetermined pattern onto a flat support performed by direct writing by means of a particle beam comprises at least: deposition of a photoresist layer on a free surface of the support, application of the beam on exposed areas of the photoresist layer, performing correction by modulation of exposure doses received by each exposed area, developing of the photoresist layer so as to form said pattern. Correction further comprises determination of a substitution pattern (11) comprising at least one subresolution feature and use of the substitution pattern (11) for determining the areas to be exposed when the electron beam is applied. In addition, modulation takes account of the density of the substitution pattern (11) near to each exposed area.
    Type: Application
    Filed: May 5, 2006
    Publication date: June 25, 2009
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE, FREESCALE SEMICONDUCTOR, INC.
    Inventors: Laurent Pain, Serdar Manakli, Georges Bervin