Abstract: Disclosed herein are embodiments of tools and techniques for computing the electric coupling in terms of parasitic admittance and capacitance values between a through silicon via (TSV) and surrounding interconnect of an integrated circuit layout design. In particular embodiments, a computation of one or more admittance and capacitance values between a through-silicon-via (TSV) structure and an interconnect structure of the three-dimensional integrated circuit layout design using two or more field solvers or rule-based engines that are different from one another is performed. In addition, electrical connectivity for the coupling parasitic between a TSV and an interconnect is established. Then, a parasitic netlist representation of the three-dimensional integrated circuit layout design that includes the above parasitic element values is generated.