Abstract: The application is directed to improved dye-sensitized solar cells and methods for making the same. In accordance with certain embodiments, dye-sensitized anodes are exposed to a vapor including at least one chemical that reacts with the catalytically active material of the anode to deposit a silica layer only on regions that are not covered with the dyes. The resulting self-aligned silica layers provide increased efficiency for dye-sensitized solar cells by reducing the leakage current from the anode to the electrolyte.

Abstract: This disclosure relates to terpene solutions of metal precursors used for chemical vapor deposition, atomic layer deposition, spray pyrolysis or misted deposition. The terpenes do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. In spray pyrolysis or misted deposition, small droplets provide uniform coating. Terpenes have high flash points and low flammability, reducing the risk of fires. Terpenes have low toxicity and are biodegradable. They are available in large amounts from renewable, natural plant sources, and are low in cost.

Abstract: An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces.

Abstract: An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces.

Abstract: This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material.

Abstract: An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N?-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings.

Abstract: An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.

Abstract: An interconnect structure for integrated circuits incorporates manganese silicate and manganese silicon nitride layers that completely surrounds copper wires in integrated circuits and methods for making the same are provided. The manganese silicate forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The manganese silicate and manganese silicon nitride also promote strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use. The strong adhesion at the copper-manganese silicate and manganese silicon nitride interfaces also protect against failure by electromigration of the copper during use of the devices. The manganese-containing sheath also protects the copper from corrosion by oxygen or water from its surroundings.

Abstract: Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN?-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates be the reaction of alternating doses of cobalt(II) bis(N,N?-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.

Abstract: A non-metallic industrial container having a fire resistant outer layer made from a polymer or other thermoplastic resin filled with an intumescent powder and forming part of the structure of the container is provided. The container may be a plastic drum, fibre drum, composite intermediate bulk container or other suitable industrial container. The intumescent layer protects the container from fire by expanding and charring when exposed to intense heat.

Abstract: A fire resistant composite intermediate bulk container for holding flammable liquids is provided. The composite IBC has an inner polyethylene container surrounded on at least its vertical sides by a protective metal cage. The protective metal cage is coated with an intumescent paint or other intumescent coating. When the intumescent coating is exposed to high temperatures, such as could occur during a fire, the coating swells and chars, producing an ash that insulates the metal cage, preventing it from heating up to the point where it can melt through the polyethylene container.

Abstract: A fire protective cover for protecting from warehouse fires non-metallic liquid holding containers supported by a steel cage is provided. The cover has a heat insulating layer and a heat reflective layer adjacent the heat insulating layer on the side opposite the steel support cage. The cover drapes over the top and sides of the steel cage, creating a space between the cover and the container. The cover mitigates the possibility that the container will melt during a warehouse fire by reducing the heat transfer from the fire to the steel cage and by creating an oxygen depleted zone between the cover and the container.

Abstract: A corrosion resistent protective plastic overlay is intimately engaged with the chime of a fibre drum and extends from an inner edge portion thermally bonded to the drum lining over the head and into the exterior chime groove. The overlay is fusion bonded to the chime throughout the full extent of the surface-to-surface engagement therebetween.

Abstract: A corrosion resistent protective plastic overlay is intimately engaged with the chime of a fibre drum and extends from an inner edge portion thermally bonded to the drum lining over the bead and into the exterior chime groove. The overlay is fusion bonded to the chime throughout the full extent of the surface-to-surface engagement therebetween.

Abstract: This relates to a telescoped twin drum arrangement for disposal of hazardous materials. Most specifically there is provided a steel first and outer drum and a fibre second and inner drum. By placing the material which is to be disposed within the fibre drum and then the fibre drum within the steel drum, all government regulations with respect to the shipment of hazardous material are met. On the other hand, at the point of disposal, the fibre drum may be separately disposed of together with the hazardous material retained therein while the still clean steel drum and its cover components may be returned to the place of origin for refilling with anther fibre drum. In order to facilitate the closing of the fibre drum, there is placed in the bottom of the steel drum beneath the fibre drum an elevator or inflated support in the form of a pillow.