Abstract: A light-to-electrical energy conversion device comprising a nano structure is formed on a surface of a semiconductor substrate. The nanostructure comprises an array of basic light antenna nanocells, with the individual antenna nanocells formed as “rectenna” structures. Light energy is absorbed within each independent antenna nanocell and converted to direct current. In one particular configuration, the structure of each basic nanocell comprises a cavity or cavities dimensioned to accept light as the wave of classical physics. These cavities function as quantum confinement sites for electrons that constitute an absorbing mass. The cavity dimensionality provides a determinative factor in wavelength discrimination of the nanocell structure.

Abstract: Optically interactive nanostructural element. The element includes a semiconductor substrate including at least one radiation guide region extending into the substrate. The geometry of the substrate material surrounding the radiation guide region is selected so that it acts as a quantum confinement region for electrons in the substrate material and the radiation guide region acts as a classical waveguide for radiation so that the element absorbs or emits light of a wavelength corresponding to the selected geometry. In a preferred embodiment, the optically interactive nanostructural element includes an array of the radiation guide regions spatially disposed over a surface.

Abstract: A wafer of neutron transmutation doped silicon having a p-n junction between extended opposite surfaces is formed with bevelled edges. A single or plurality of reverse biased signal contacts is disposed on one surface to provide a single or integrated array of avalanche photodiodes. In addition, an avalanche photodetector (APD) capable of detecting a single photoelectron or imaging multiple photoelectrons comprises a light sensitive photocathode, similar to that in a photomultiplier tube, acting as a converter to produce photoelectrons, which are then accelerated to an anode. The anode comprises a single avalanche photodiode (AP) for detecting or an array (APA) for imaging photoelectrons. The energetic photoelectrons striking the AP or the APA serve as the AP or APA's input signal, respectively.

Abstract: A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on one surface to provide an integrated array of avalanche photodiodes.