Abstract: A biasing circuit for a power amplifier, for use in a transmitter, that substantially reduces distortion during key-up and thereby reduces key-up time. The power amplifier includes an output transistor and a bias circuit. The bias circuit is applied to all the class AB stages of the power amplifier. The bias circuit provides to the output transistor a first bias level during the preheat period and a second bias level during the transmit period. This first bias level is predetermined to cause the output transistor to reach the steady-state junction temperature achieved by the output transistor during the transmit period (i.e., when transmitting output signals biased with the second bias level). The preheat period ends when this steady-state temperature is reached. Thus, the power amplifier can then transition to a transmit period having already reached the steady-state junction temperature. Because the output transistor is already heated to the steady-state junction temperature, "thermal" distortion (i.e.