Abstract: An integrated circuit includes a first transistor array over a semiconductor substrate and is distributed among a first plurality of first transistor banks. A second transistor array in or over the semiconductor substrate is distributed among a second plurality of second transistor banks. A first one of the first transistor banks is located between a first one and a second one of the second transistor banks, and the second one of the second transistor banks is located between the first one of the first transistor banks and a second one of the first transistor banks. The first transistor array and the second transistor array may be alternately operated to implement a voltage-conversion integrated circuit.

Abstract: Methods, computer readable media, and devices for quantifying an infrastructure service health as a score and optimizing performance of the infrastructure service based on benchmarks of dynamically identified control groups are disclosed. One method may include determining, for an infrastructure service of an organization, a metric health score for one or more metrics and an overall health score for the organization, creating, for at least one of the metrics, a number of control groups based on a timeframe criteria and including a set of organizations having a metric health score for the timeframe criteria similar to the organization, and maximizing performance of the infrastructure service using machine learning to compare, for at least one metric, performance impacts to the organization based on service changes with the number of control groups for the at least one metric.

Abstract: A method of data processing includes identifying a segment of entity identifiers that are associated with a target tenant and correspond to a set of clients that are to receive at least one content object via a first channel of a plurality of supported channels. The method includes modifying a feature associated with communication of content for a test subset of the segment relative to a control subset of the segment, determining a first metric corresponding to the control subset and the test subset in association with the communication of the content via the first channel and a second metric associated with the target tenant over a second channel of the plurality of channels. The method includes comparing the second metric to a metric associated with a peer group of tenants, and adjusting subsequent communications for the target based at least in part on the comparing and the first metric.

Abstract: A computerized method and system for correlating template data to select contextually relevant content including receiving a request from a consumer device to serve a template at a server, the template comprising at least one tag, selecting a content in a database associated with the at least one tag based at least in part on a correlation between the template and the at least one tag, substituting the at least one tag with the content, and transmitting the template from the server to the consumer device.

Abstract: A computerized method and system for correlating template data to select contextually relevant content including receiving a request from a consumer device to serve a template at a server, the template comprising at least one tag, selecting a content in a database associated with the at least one tag based at least in part on a correlation between the template and the at least one tag, substituting the at least one tag with the content, and transmitting the template from the server to the consumer device.

Abstract: A computerized method and system for correlating template data to select contextually relevant content including receiving a request from a consumer device to serve a template at a server, the template comprising at least one tag, selecting a content in a database associated with the at least one tag based at least in part on a correlation between the template and the at least one tag, substituting the at least one tag with the content, and transmitting the template from the server to the consumer device.

Abstract: A computerized method and system for correlating template data to select contextually relevant content including receiving a request from a consumer device to serve a template at a server, the template comprising at least one tag, selecting a content in a database associated with the at least one tag based at least in part on a correlation between the template and the at least one tag, substituting the at least one tag with the content, and transmitting the template from the server to the consumer device.

Abstract: A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

Abstract: The present invention relates to improved methods and structures for forming interconnect patterns in low-k or ultra low-k (i.e., having a dielectric constant ranging from about 1.5 to about 3.5) interlevel dielectric (ILD) materials. Specifically, reduced lithographic critical dimensions (CDs) (i.e., in comparison with target CDs) are initially used for forming a patterned resist layer with an increased thickness, which in turn allows use of a simple hard mask stack comprising a lower nitride mask layer and an upper oxide mask layer for subsequent pattern transfer. The hard mask stack is next patterned by a first reactive ion etching (RIE) process using an oxygen-containing chemistry to form hard mask openings with restored CDs that are substantially the same as the target CDs. The ILD materials are then patterned by a second RIE process using a nitrogen-containing chemistry to form the interconnect pattern with the target CDs.

Abstract: The present invention is directed to a power-grid infrastructure for energy as well as methods for efficiently distributing the energy within the infrastructure that rely on a decentralized approach and the use of intelligent agents to facilitate the communication between different levels of the infrastructure as well as the distribution of the energy across the actual electrical couplings within the infrastructure.

Abstract: A protruding spacer that protrudes above the top surface of a gate electrode structure provides enhanced resistance to exposure of the gate electrode during the etch process used to form self-aligned contacts. The protruding spacer may be formed using an amorphous carbon sacrificial layer as the top layer of the patterned gate electrode structure. Dielectric spacers are formed alongside the gate electrode structure, including alongside the sacrificial amorphous carbon layer. The dielectric spacers extend substantially to the top of the amorphous carbon layer. The amorphous carbon layer is then removed such that the remaining gate structure includes dielectric spacers that have a protruding section that protrudes above the top surface of the remaining gate structure. A nitride layer may be formed over the gate structure. Such a structure prevents exposure of the gate electrode during the formation of self-aligned contacts, and shorting, once the contact openings are filled.

Abstract: A method for forming high density emission elements for a field emission display and field emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes as practiced in the prior art. The emission elements formed according to the present invention provide a more uniform emission of electrons than the prior art techniques. Further, a display incorporating emission elements formed according to the present invention provides increased brightness.

Abstract: A method for forming a trench in a semiconductor silicon substrate. An anti-reflective coating layer and a photoresist layer are formed over the substrate and patterned in accordance with a location for the trench. During the trench etch into the silicon substrate, the etch environment is monitored to detect the material of the anti-reflective coating layer. The etch process is controlled in response to detecting the removal of this material and the known etch rate differential between the anti-reflective coating material layer and the silicon substrate.

Abstract: A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

Abstract: A film structure includes low-k dielectric films and N—H base source films such as barrier layer films, etch-stop films and hardmask films. Interposed between the low-k dielectric film and adjacent N—H base film is a TEOS oxide film which suppresses the diffusion of amines or other N—H bases from the N—H base source film to the low-k dielectric film. The film structure may be patterned using DUV lithography and a chemically amplified photoresist since there are no base groups present in the low-k dielectric films to neutralize the acid catalysts in the chemically amplified photoresist.

Abstract: A film structure includes low-k dielectric films and N—H base source films such as barrier layer films, etch-stop films and hardmask films. Interposed between the low-k dielectric film and adjacent N—H base film is a TEOS oxide film which suppresses the diffusion of amines or other N—H bases from the N—H base source film to the low-k dielectric film. The film structure may be patterned using DUV lithography and a chemically amplified photoresist since there are no base groups present in the low-k dielectric films to neutralize the acid catalysts in the chemically amplified photoresist.