Abstract: Apparatus for selectively polishing an elevated area of the surface of a semiconductor wafer. The apparatus makes a topographical map of the surface of a semiconductor wafer to identify a high area on the surface; positions polishing apparatus over and in contact with the elevated area; and, moves the polishing apparatus and/or the wafer to polish selectively only the elevated area of the wafer surface.

Abstract: Apparatus for polishing a side of a thin, flat wafer of a semiconductor material includes first and second polishing heads which each hold a wafer against a wetted polishing surface and which each rotate and oscillate its respective wafer over the polishing surface. When the first polishing head is moved away from the polishing surface to clean, eject, and replace its wafer, the second polishing head occupies the space over the polishing surface normally occupied by the first polishing head so that the polishing surface is used substantially continuously, and not intermittently.

Abstract: Opposed, conically shaped brushes are utilized to mechanically and chemically removed foreign material from the surfaces of a semiconductor wafer. The brushes are be readily accessed for cleaning and contact a relatively large surface area of the wafer.

Abstract: Apparatus for polishing a side of a thin, flat wafer of a semiconductor material includes first and second polishing heads which each hold a wafer against a wetted polishing surface and which each rotate and oscillate its respective wafer over the polishing surface. When the first polishing head is moved away from the polishing surface to clean, eject, and replace its wafer, the second polishing head occupies the space over the polishing surface normally occupied by the first polishing head so that the polishing surface is used substantially continuously, and not intermittently.

Abstract: Apparatus for cleaning an offset semiconductor wafer includes first and second opposed brushes circumscribing a common drive shaft. The wafer includes a circular peripheral edge. At any given instant, a first portion of the offset semiconductor wafer is positioned between and contacts the brushes while the second remaining portion of the semiconductor wafer extends outwardly from between the brushes. The peripheral edge of the second portion of the wafer contacts and is turned by a rotating support member.

Abstract: Apparatus for transporting a wafer into position against the pressure head of apparatus for polishing the wafer. The transport apparatus includes a dolly for positioning a wafer over a transport head assembly. The transport head assembly removes the wafer from the dolly and positions the wafer against the pressure head. When the transport head assembly removes the wafer from the dolly and positions the wafer against the pressure head, the transport head assembly only contacts the wafer at selected points at the periphery of the wafer.

Abstract: Apparatus for spin drying a semiconductor wafer by centrifugal force. The apparatus spins the wafer about a selected axis while the wafer is being rinsed, and then displaces the wafer away from the axis along a path of travel circumscribing the axis to dry the wafer.

Abstract: Apparatus for transporting a wafer into position against the pressure head of apparatus for polishing the wafer. The transport apparatus includes a dolly for positioning a wafer over a transport head assembly. The transport head assembly removes the wafer from the dolly and positions the wafer against the pressure head. When the transport head assembly removes the wafer from the dolly and positions the wafer against the pressure head, the transport head assembly only contacts the wafer at selected points at the periphery of the wafer.

Abstract: Improved polishing apparatus. The apparatus includes a polishing head which holds a semiconductor wafer against a polishing surface. The apparatus permits the accurate application in small increments of pressure to the semiconductor wafer and provides a polishing head which "floats" and quickly reacts to and compensates for minor variations in the contour of the polishing surface contacting the semiconductor wafer.

Abstract: The polishing apparatus utilizes a pressure head that imparts rotary motion to a wafer to be polished during the polishing operation and is of such a structure so as to eliminate the need for the use of any bonding agent for holding the wafer in intimate contact therewith. In this apparatus, the head picks up a single, thin, flat wafer of a semiconductive material in a manually loaded pickup station, holds the wafer thereon as it is selectively moved into one of two polishing stations and then into a receiving station. The pickup and holding of the wafer on the head as it is moved from one station to another and positioned therein is accomplished with a vacuum applied to the head. Two separate polishing surfaces are used, one being for primary stock removal and the other for cosmetic or secondary polishing. Means is provided which enables the operator to selectively control the cycle time, the pressure applied to the wafer, the rate of flow of polishing agents, etc.

Abstract: The polishing apparatus utilizes a pressure head that imparts rotary motion to a wafer to be polished during the polishing operation and is of such a structure as to eliminate the need for the use of any bonding agent for holding the wafer in intimate contact therewith. In this apparatus, the head picks up a single, thin, flat wafer of a semiconductive material in a manually loaded pickup station, holds the wafer thereon as it is selectively moved into one of two polishing stations and then into a receiving station. The pickup and holding of the wafer on the head as it is moved from one station to another and positioned therein is accomplished with a vacuum applied to the head. Two separate polishing surfaces are used, one being for primary stock removal and the other for cosmetic or secondary polishing. Means is provided which enables the operator to selectively control the cycle time, the pressure applied to the wafer, the rate of flow of polishing agents, etc.