Abstract: An integrated, interdigitated capacitor incorporates all layers of an I.C. fabrication process into its design to produce a multi-layer high-capacitance device. For example, a "two-metal, two-poly" CMOS fabrication process is used to produce a capacitor having five interdigitated conductive plates, which when interconnected produce a total capacitance at least twice as great as a conventional two-plate capacitor of the same area, while requiring no additional I.C. processing steps. The invention's conductive plates and interconnections are arranged so that interconnection traces stay within strict design limits intended to insure reliable connections, while keeping the area required for the interconnections small.