Patents by Inventor Gerald P. Ceasar

Gerald P. Ceasar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4686323
    Abstract: A two terminal, multiple cell photovoltaic device, each including materials having mutually imcompatible preparatory processes, is manufactured by separately forming the cells on substrates and adhering the cells with a light-transmissive, electrically conductive adhesive. Highly efficient photovoltaic devices including electrodeposited cells of cadmium sulfide and cadmium telluride can be combined with evaporated and condensed cells of cadmium sulfide and copper indium diselenide can be manufactured according to the invention.
    Type: Grant
    Filed: June 30, 1986
    Date of Patent: August 11, 1987
    Assignee: The Standard Oil Company
    Inventors: William J. Biter, Gerald P. Ceasar
  • Patent number: 4416755
    Abstract: Apparatus and method for producing semiconducting films on a substrate in a vacuum chamber comprising a plasma generator, means for directing and accelerating an ion beam from the plasma to a sputtering target also contained within the vacuum chamber. A shield means having a low sputtering efficiency compared to the sputtered target is placed in the vacuum chamber between stray ion beams and the vacuum chamber surface and any implements to intercept stray or deflected ion beams and thereby minimize sputtering of the vacuum chamber and implements by the plasma which in turn minimizes the material of which the vacuum chamber and implements are made being present as impurities in the newly formed film. In a preferred embodiment amorphous silicon films are prepared with a ion beam containing a reactive gas which passivates the dangling bonds in silicon film.
    Type: Grant
    Filed: April 3, 1981
    Date of Patent: November 22, 1983
    Assignee: Xerox Corporation
    Inventors: Gerald P. Ceasar, Scott F. Grimshaw
  • Patent number: 4376688
    Abstract: A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas.
    Type: Grant
    Filed: April 3, 1981
    Date of Patent: March 15, 1983
    Assignee: Xerox Corporation
    Inventors: Gerald P. Ceasar, Scott F. Grimshaw