Abstract: A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.

Abstract: A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.

Abstract: A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.

Abstract: An improved method is provided for processing the backside of a wafer within an epitaxial reactor chamber, such as by etching the backside of the wafer or applying a back seal to the backside of the wafer. The backside of the wafer can therefore be processed within the reactor chamber and an epitaxial layer can then be deposited on the front side of the wafer without ever removing the wafer from the epitaxial reactor chamber. In one embodiment, the backside of the wafer is processed by applying a back seal layer to the backside of the wafer. The back seal layer can be applied by either passing a gas over the backside of the wafer or by setting the wafer upon a sacrificial wafer. In either instance, the gas or the sacrificial wafer reacts with the wafer to grow the back seal layer on the backside of the wafer. In another embodiment, the backside of the wafer is processed by etching the backside of the wafer, such as by passing a reactive gas over the backside of the wafer.

Abstract: A method is introduced which improves gas flow characteristics within a reaction chamber used in a Chemical Vapor Deposition (CVD) system, thereby reducing the formation of Light Point Defects (LPDs) and improving epitaxial layer thickness control. This is accomplished by forcing the gas flow from its normally turbulent or non-uniform state into a more steady, linear, and controlled flow using one or more baffles. A steady flow of reactant gases significantly reduces the tendency of particles to move from a lower portion of the reaction chamber and settle onto the wafer during processing, thus reducing LPDs. It further allows a more controlled deposition onto the wafer which in effect improves the layer thickness control.

Abstract: A set (10) of susceptors (12) having essentially equal outer diameters (14) and different depression diameters (20) is used in a horizontal flow semiconductor epitaxial reactor. The susceptors receiving smaller diameter wafers (24) have an increased surface area (84) that preheats the process gases and leads to reduced resistivity variation in the epitaxial layers. The susceptors fit interchangeably onto a susceptor support (32) and into a susceptor ring (38), thereby allowing wafers of different diameters to be processed by changing only the susceptor and not the susceptor support, the susceptor ring, and other associated hardware. Set-up time is greatly reduced, thereby allowing more flexibility in scheduling wafers to be processed and improving reactor utilization. Inventory of reactor components can be reduced because it is no longer necessary to stock susceptor rings and other hardware for wafers of different diameters.