Patents by Inventor Gerald Reinwald

Gerald Reinwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
    Patent number: 10217636
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: February 26, 2019
    Assignee: Infineon Technologies AG
    Inventors: Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
    Publication number: 20180204725
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Application
    Filed: March 13, 2018
    Publication date: July 19, 2018
    Inventors: Thomas Aichinger, Victorina Poenariu, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
    Patent number: 9934972
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: April 3, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Victorina Poenariu, Gerald Reinwald, Roland Rupp, Gerald Unegg
  • Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
    Publication number: 20170103894
    Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
    Type: Application
    Filed: October 7, 2016
    Publication date: April 13, 2017
    Inventors: Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Dethard Peters, Victorina Poenariu, Gerald Reinwald, Roland Rupp, Gerald Unegg