Abstract: The present invention relates to an optoelectronic apparatus comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and —drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); — noise suppression means comprising a modulation unit including: —a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of ?m/2?; and —a signal extraction unit to extract a required electric signal, from an output signal, with no components below ?m/2?. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.

Abstract: Provided is a light emitting device that includes a substrate; a first electrode formed by a first electrically conductive layer arranged over the substrate; an active light emitting layer arranged over said first electrically conductive layer, and that includes a host matrix and light emitting quantum dots embedded there within; and a second electrode formed by a second electrically conductive layer arranged over the active light emitting layer. The host matrix has charge carrier supplier quantum dots blended with the light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers. Also provided is a spectrometer having the LED and a down-converting film for a LED.

Abstract: Provided are methods for producing magnetic composites. In some embodiments, the methods include providing a material in a non-continuous solid form; providing optically resonant particles dispersed within at least a region of said material; and exposing the optically resonant particles to electromagnetic radiation to be absorbed thereby to optically resonate to generate heat to fuse together portions of the material in thermal contact therewith. In some embodiments, the optically resonant particles have magnetic properties and/or are adapted to have magnetic properties induced by a stimulus, and the material is a non-magnetic material. Also provided are systems, computer program products, and packages adapted to implement the presently disclosed methods.

Abstract: Provided is a method for producing an electrically conductive composite, wherein the method includes: a) providing a bed of a polymer in a non-continuous solid form; b) providing, on the polymer bed, a composition that comprises a chemical precursor dissolved in a liquid medium made to inhibit a chemical reaction of the chemical precursor into forming an electrically conductive inorganic component; c) forming an electrically conductive inorganic component from a chemical reaction of the chemical precursor, by at least evaporating the liquid medium; and d) exposing to electromagnetic radiation an electromagnetic radiation absorber of the composition, to sinter those portions of said polymer bed in thermal contact therewith, to form a polymer network that percolates an electrically conductive network formed with the electrically conductive inorganic component. Also provided are a system and a package adapted to implement the presently disclosed method.

Abstract: Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Abstract: The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit.

Abstract: Provided are gaze tracking apparatuses, which in some embodiments can include an optoelectronic device, wherein the optoelectronic device includes an image sensor with non-local readout circuit having a substrate and a plurality of pixels and operatively connected to a control unit, wherein a first area of the substrate is at least partially transparent to visible light and at least the plurality of pixels of the image sensor are arranged on the first area of the substrate to aim to an eye of a user when placed in front of an inner face of the substrate, and wherein the control unit is also adapted to control the image sensor to acquire image information from the user's eye for performing a gaze tracking of the user's eye.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Provided are image sensors with non-local readout circuits that include a substrate and a plurality of pixels and operatively connected to a control unit, wherein the control unit has first and second biasing circuits for providing, respectively, substantially symmetrical first and second biasing voltages and including, respectively, first and second selection means to selectively bias the pixels; and a readout circuit for reading out the pixels; and in that each pixel includes a photo-active element that has a photosensitizing layer associated to a transport layer; a non-photo-active reference element; first and second contacts circuitally connected, respectively, to the first and second biasing circuits; and an output contact circuitally connected to the readout circuit; wherein the photo-active element is circuitally connected between the first and output contacts, and the reference element is circuitally connected between the output and second contacts.

Abstract: The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer and an electron acceptor layer. The present invention also relates to the use of the photovoltaic material.

Abstract: Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one side of the junction between these two layers is substantially depleted of charge carriers, i.e., both free electrons and free holes, in the absence of solar illumination. In further aspects of the invention, the light-absorbing layer is comprised of dual-shell passivated quantum dots, each having a quantum dot core with surface anions, an inner shell containing cations to passivate the core surface anions, and an outer shell to passivate the inner shell anions and anions on the core surface.

Abstract: The invention relates to an image sensor comprising a plurality of pixels operatively connected to a control unit that includes a readout circuit, characterized in that it comprises a monolithic three-dimensional integrated circuit comprising an upper level and a lower level; wherein each pixel comprises: a photosensitive element arranged in said upper level and comprising a photosensitizing layer associated to a transport layer; an active device arranged in said lower level and operatively coupled to the photosensitive element; and a first intermediate terminal and an output terminal circuitally connected, respectively, to the photosensitive element and to the readout circuit; wherein the image sensor further comprises a dark current suppressing circuit; and wherein the control unit is configured to, upon readout of a pixel, circuitally connect the first intermediate terminal of said pixel with its output terminal through the dark current suppressing circuit.