Abstract: A method for forming a lift-off mask structure includes providing a substrate body, depositing a layer of bottom anti-reflective coating, BARC, over a surface of the substrate body, and depositing a layer of photosensitive resist over the BARC layer. The method further includes exposing the resist layer to electromagnetic radiation through a photomask, and forming the lift-off mask structure by applying a developer for selectively removing a portion of the BARC layer and of the resist layer such that an underlying portion of the surface of the substrate body is exposed.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: A spectrometer includes an emitter that is configured to emit electromagnetic radiation, a sample area that is arranged at an outer face of the spectrometer, a modulation unit including an electrochromic material, an optical filter, an optical detector, an integrated circuit that has a main plane of extension, and an optical path for electromagnetic radiation emitted by the emitter towards the optical detector via the sample area, the modulation unit and the optical filter, wherein the electrochromic material is electrically connected with the integrated circuit, and the modulation unit is configured to modulate electromagnetic radiation temporally. Furthermore, a method for detecting electromagnetic radiation is provided.

Abstract: An interference filter comprises a substrate, a filter stack and at least one absorption layer. The filter stack comprises alternating layers of optical coatings with different refractive indices arranged on the substrate. The at least one absorption layer is comprised of an optically absorbing material which is arranged on the substrate.

Abstract: An integrated radiation sensor is disclosed. The integrated radiation sensor comprises a first optical filter associated with a first radiation-sensing element and a second optical filter associated with a second radiation-sensing element. The first optical filter is configured to pass radiation to the first radiation-sensing element with wavelengths within a UV-C range. The second optical filter is configured to pass radiation to the second radiation-sensing element with wavelengths longer than wavelengths within the UV-C range. Also disclosed is a method of manufacturing the integrated radiation sensor and methods of use of the integrated radiation sensor.

Abstract: An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.

Abstract: An apparatus includes an optical device (22) and an electrically conductive bond pad (32). A multi-layer stack (42,44,46) of electrically conductive materials is disposed on the bond pad (32). An ITO layer (48) is disposed at least partially on the optical device (22) and makes ohmic contact with the multi-layer stack (42,44,46).

Abstract: A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.

Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.

Abstract: A resist layer is applied on a carrier, an opening with an overhanging or re-entrant sidewall is formed in the resist layer, the carrier being uncovered in the opening, a lens material is deposited, thus forming a lens on the carrier in the opening, and the resist layer is removed.

Abstract: An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.

Abstract: A filter assembly includes comprises an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.

Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.

Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.

Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.

Abstract: An optical sensing device comprises a substrate carrying a first and a second photodetector stack comprises a band-pass filter, a decoupling layer arranged on the band-pass filter and a lower dielectric mirror arranged on the decoupling layer. The filter stack comprises a spacer stack with a primary spacer layer arranged on the lower dielectric mirror, comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer comprising the first dielectric material, wherein a first segment of the first spacer layer is arranged on the primary spacer layer and covers the second photodetector but not the first photodetector. The filter stack comprises an upper dielectric mirror arranged on the spacer stack.

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.

Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.