Abstract: A heat removal element comprises a deformable frame, having a first coefficient of thermal expansion. The frame includes a set of separate cavities formed in the frame, the set including a first cavity and a second cavity; and on one side of the first cavity, a deformable wall adapted to provide mechanical compliance with a heat source for transferring heat away from the heat source. The second cavity comprises a material that fills, at least partly, the second cavity, this material having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion.

Abstract: A heat removal element comprises a deformable frame, having a first coefficient of thermal expansion. The frame includes a set of separate cavities formed in the frame, the set including a first cavity and a second cavity; and on one side of the first cavity, a deformable wall adapted to provide mechanical compliance with a heat source for transferring heat away from the heat source. The second cavity comprises a material that fills, at least partly, the second cavity, this material having a second coefficient of thermal expansion that differs from the first coefficient of thermal expansion.

Abstract: A compliant heat sink for transporting heat away from at least one electronic component, the heat sink includes a body, where the body includes a flexible element thermally contacting at least one electronic component. The heat sink further includes a cavity located in the body, where the cavity is at least partially covered by the flexible element. The heat sink further includes a raised member of the body coupled to the flexible element, where a portion of the raised member partially extends into the cavity. The heat sink further includes a guiding structure of the body coupled in the cavity of the body, wherein the guiding structure is adapted for guiding the movement of the raised member in a moving direction.

Abstract: A compliant heat sink for transporting heat away from at least one electronic component, the heat sink includes a body, where the body includes a flexible element thermally contacting at least one electronic component. The heat sink further includes a cavity located in the body, where the cavity is at least partially covered by the flexible element. The heat sink further includes a raised member of the body coupled to the flexible element, where a portion of the raised member partially extends into the cavity. The heat sink further includes a guiding structure of the body coupled in the cavity of the body, wherein the guiding structure is adapted for guiding the movement of the raised member in a moving direction.

Abstract: A heat exchanger includes a flat metal tube that has flat top and bottom surfaces and an inner passage. The surfaces remove heat from a liquid passing through the passage from an inlet and toward an outlet of the heat exchanger. A first plurality of solid metal posts are mounted perpendicularly upon the top surface. Each fin of a first plurality of fins has holes fitted about the first plurality of posts such that the fins are mounted on the posts in vertically-spaced, parallel alignment relative to each other and the top surface. A second plurality of solid metal posts are mounted perpendicularly upon the bottom surface. Each fin of a second plurality of fins has holes fitted about the second plurality of posts such that the fins are mounted on the posts in vertically-spaced, parallel alignment relative to each other and the bottom surface.

Abstract: A system includes an integrated circuit and a heatsink mounted thereon. The heatsink includes a flat base plate thermally coupled to a top surface of the integrated circuit, thermally-conductive solid metal posts mounted perpendicularly on the base plate, and flat metal fins. Each of the fins has holes fitted about the posts such that the fins are mounted on the posts in vertically-spaced, parallel alignment relative to each other and the top surface of the base plate. The system further includes a load plate mounted upon top surfaces of the posts, a printed circuit board, and a microprocessor socket mounted on the printed circuit board. The microprocessor socket includes a socket base upon which the integrated circuit is mounted such that the integrated circuit is electrically coupled through the socket base to the printed circuit board. Air may be forced through the heatsink.

Abstract: Each pair of memory modules in a memory system are cooled using a shared cooling pipe, such as a heat pipe or liquid flow pipe. An example embodiment includes one pair of memory module sockets on opposite sides of the respective cooling pipe. An inner heat spreader plate is thermally coupled to the cooling pipe and in thermal engagement with a first face of the memory module adjacent to the included cooling pipe. Heat is conducted from the second face of the memory module to the cooling pipe, such as from an outer plate in thermal engagement with an opposing second face of the memory modules and with the inner plate.

Abstract: A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.

Abstract: Operating a computer system includes determining, for each of a plurality of electronic units in a computer system, at least one upcoming process being assigned to a specific electronic unit. An anticipated workload for the specific electronic unit is identified based upon the at least one upcoming process. At least one control signal is generated based upon a plurality of anticipated workloads for the plurality of electronic units. A flow of cooling fluid to each of a plurality of cooling units in the computer system is controlled based upon the at least one control signal. Each of the plurality of cooling units are respectively associated with an electronic unit of the plurality of electronic units.

Abstract: Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.

Abstract: A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a transition metal oxide material by electrostatically moving oxygen vacancies into or out of the regions containing a wavefunction of an optical beam. A specific oxygen vacancy profile in the transition metal oxide material may be programmed into the optical medium. The oxygen vacancy profile alters an absorption profile within the optical medium. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. Amorphous transition-metal oxides enable integration into back-end-of-line (BEOL) interconnect structures and do not have birefringence. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.

Abstract: A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.

Abstract: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.

Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Abstract: Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.

Abstract: The present invention relates to a memory cell comprising: a resistive structure; at least two electrodes coupled to the resistive structure, and at least one hydrogen reservoir structure, wherein the application of an electrical signal to one of the at least two electrodes causes the electrical resistance of the resistive structure to be modified by altering a hydrogen-ion concentration in the resistive structure.

Abstract: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.

Abstract: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.