Patents by Inventor Gerhard Klimeck

Patent number: 8309989
Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
Type: Grant
Filed: August 18, 2010
Issued: November 13, 2012
Assignee: Purdue Research Foundation
Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
Application number: 20120043607
Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
Type: Application
Filed: August 18, 2010
Issued: February 23, 2012
Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
Patent number: 6667490
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Grant
Filed: October 23, 2002
Issued: December 23, 2003
Assignee: Raytheon Company
Inventors: Jan Paul Van der Wagt, Gerhard Klimeck
Application number: 20030043660
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Application
Filed: October 23, 2002
Issued: March 6, 2003
Assignee: Raytheon Company ,a Delaware corporation
Inventors: Jan Paul van der Wagt, Gerhard Klimeck
Patent number: 6490193
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Grant
Filed: August 22, 2001
Issued: December 3, 2002
Assignee: Raytheon Company
Inventors: Jan Paul van der Wagt, Gerhard Klimeck