Patents by Inventor Gerhard Klimeck

Application number: 20150120259
Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
Type: Application
Filed: October 24, 2014
Issued: April 30, 2015
Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann Christoph Kubis, Ganesh Hegde
Patent number: 8309989
Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
Type: Grant
Filed: August 18, 2010
Issued: November 13, 2012
Assignee: Purdue Research Foundation
Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
Application number: 20120043607
Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
Type: Application
Filed: August 18, 2010
Issued: February 23, 2012
Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
Patent number: 6667490
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Grant
Filed: October 23, 2002
Issued: December 23, 2003
Assignee: Raytheon Company
Inventors: Jan Paul Van der Wagt, Gerhard Klimeck
Application number: 20030043660
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Application
Filed: October 23, 2002
Issued: March 6, 2003
Assignee: Raytheon Company ,a Delaware corporation
Inventors: Jan Paul van der Wagt, Gerhard Klimeck
Patent number: 6490193
Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
Type: Grant
Filed: August 22, 2001
Issued: December 3, 2002
Assignee: Raytheon Company
Inventors: Jan Paul van der Wagt, Gerhard Klimeck