Abstract: The disclosure describes to techniques for detecting field failures or performance degradation of circuits, including integrated circuits (IC), by including additional contacts, i.e. terminals, along with the functional contacts that used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, temperature and impedance. These electrical characteristics may be representative of a certain failure mode and may be an indicator for circuit state-of-health (SOH), while the circuit is performing in the field.

Abstract: The disclosure describes to techniques for detecting field failures or performance degradation of circuits, including integrated circuits (IC), by including additional contacts, i.e. terminals, along with the functional contacts that used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, temperature and impedance. These electrical characteristics may be representative of a certain failure mode and may be an indicator for circuit state-of-health (SOH), while the circuit is performing in the field.

Abstract: Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

Abstract: According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

Abstract: Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

Abstract: In various embodiments, a method for the computer-aided determination of deviation patterns during at least one of the production or testing of a multiplicity of dies is provided. The dies are uniquely identified. The method may include determining, for each die of the multiplicity of dies and for at least one measurement process of a plurality of measurement processes which are applied to at least one portion of the dies, a measurement value which was determined in the measurement process for the respective die; and carrying out a blind source separation using the measurement values, thereby determining the deviation patterns for the dies.

Abstract: According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.

Abstract: Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.

Abstract: A device can be used for establishing gas concentrations in an examination volume. A radiation source is configured to generate an electromagnetic beam. A beam guiding apparatus is arranged downstream of the radiation source. The beam guiding apparatus is configured to set a plurality of variations of beam guidance of the beam entering the beam guiding apparatus in an observation plane in the examination volume. A spectrometer is arranged downstream of the beam guiding apparatus. The spectrometer is configured to carry out a spectral analysis of the beam leaving the beam guiding apparatus. An evaluation unit is configured to establish in the observation plane a 2D concentration distribution for one or more gases in the examination volume on the basis of the spectral analysis for different variations of beam guidance.

Abstract: In various embodiments, a method for the computer-aided determination of deviation patterns during at least one of the production or testing of a multiplicity of dies is provided. The dies are uniquely identified. The method may include determining, for each die of the multiplicity of dies and for at least one measurement process of a plurality of measurement processes which are applied to at least one portion of the dies, a measurement value which was determined in the measurement process for the respective die; and carrying out a blind source separation using the measurement values, thereby determining the deviation patterns for the dies.

Abstract: A device can be used for establishing gas concentrations in an examination volume. A radiation source is configured to generate an electromagnetic beam. A beam guiding apparatus is arranged downstream of the radiation source. The beam guiding apparatus is configured to set a plurality of variations of beam guidance of the beam entering the beam guiding apparatus in an observation plane in the examination volume. A spectrometer is arranged downstream of the beam guiding apparatus. The spectrometer is configured to carry out a spectral analysis of the beam leaving the beam guiding apparatus. An evaluation unit is configured to establish in the observation plane a 2D concentration distribution for one or more gases in the examination volume on the basis of the spectral analysis for different variations of beam guidance.

Abstract: According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization.

Abstract: A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

Abstract: According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization.

Abstract: A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

Abstract: A discrete trap memory, comprising a silicon substrate layer, a bottom oxide layer on the silicon substrate layer, a Fullerene layer on the bottom oxide layer, a top oxide layer on the Fullerene layer, and a gate layer on the top oxide layer; wherein the Fullerene layer comprises spherical, elliptical or endohedral Fullerenes that act as charge traps.

Abstract: A storage device is disclosed and is characterized in that the data to be stored therein can be automatically and repeatedly stored in the device and/or in that additional information dependent on the data to be stored therein can be generated and stored in addition to the data to be stored and/or in that the data to be stored can be consecutively read under different conditions. Thus, the data originally stored in the storage device can be rapidly and easily reconstructed.

Abstract: With the aid of the method for fault analysis according to the invention, a wide variety of chips are mapped by means of a transformation onto at least one uniform comparable wafer map. This transformation or resealing enables a chip-area-independent assessment of the products or the fabrication processes. The method for fault analysis according to the invention furthermore has the advantage that the information thus obtained can be stored very compactly in corresponding wafer databases and is thus available for further evaluations.

Abstract: A method of monitoring and/or controlling machining plans having time-dependent machining parameters includes measuring desired time-dependent machining parameters as a measured curve, generating time-independent numerical values from the measured machining parameters, and entering the time-independent numerical values into a classifier distinguishing between normal states of the machining plant and abnormal states of the machining plant. Training vectors regarded as abnormal can be filtered out from training vectors available by determining a distance of each training vector from every other training vector with a selected measure of distance for filtering of the abnormal training vectors, the training vectors having components made of time-independent numerical values, and the classifier can be trained with training vectors.

Abstract: With the aid of the method for fault analysis according to the invention, a wide variety of chips are mapped by means of a transformation onto at least one uniform comparable wafer map. This transformation or resealing enables a chip-area-independent assessment of the products or the fabrication processes. The method for fault analysis according to the invention furthermore has the advantage that the information thus obtained can be stored very compactly in corresponding wafer databases and is thus available for further evaluations.