Abstract: A thermoelectric flexible mat may include a first large surface and a second large surface. The mat may also include a plurality of p-doped elements and a plurality of n-doped elements disposed in an alternating manner with one another and electrically interconnected to a series circuit via a plurality of electrically conductive conductor bridges. The plurality of conductor bridges of the series circuit may be assigned, at least in regions, to the first large surface and the second large surface such that the first large surface defines a hot side and the second large surface defines a cold side. An absorptive absorption structure may connect the hot side and the cold side. The absorption structure may be structured and arranged such that any liquid present on the cold side is absorbable into the absorption structure and transportable to the hot side via the absorption structure.

Abstract: The invention relates to a method for producing thermoelectric layers by depositing thermoelectric material on a substrate by means of sputter deposition. In order to create a method for producing thermoelectric layers that are better suited for use in thermogenerators, and in particular have higher Seebeck coefficients, the production of a target made of thermoelectric material is proposed by mixing at least two powdered starting materials having a particle size from 0.01 ?m-5000 ?m, while coupling in energy and depositing the thermoelectric material from the target on the substrate by way of magnetron sputter deposition.

Abstract: A thermoelectric element having high thermal resistance and requiring less semiconductor material than a conventional thermoelectric element with comparable performance comprises a substrate having a substrate front side and a substrate rear side opposite the substrate front side, a first contact, applied as a layer to the substrate front side, a second contact, applied as a layer to the substrate front side, a cut-off between the first and second contact which thermally and electrically separates the first and second contact from one another, and a thermoelectrically active layer having a top side and a bottom side, which are connected to one another by lateral delimiting surfaces, wherein the thermoelectrically active layer is arranged in the cut-off in such a way that the bottom side is on the substrate front side, and one of the lateral delimiting surfaces is against the first contact and one of the lateral delimiting surfaces is against the second contact.

Abstract: A method for deposition of thermoelectric material on a substrate includes synthesizing nanoparticles of thermoelectric material and providing the nanoparticles in such a way that the printing operations can be implemented optimally, yet with the possibility of pressureless sintering thereafter. Pressureless sintering leads to dense layers, endowing the material with the mechanical and thermoelectric properties obtained by other methods. To prevent the nanoparticles reacting with one another during printing, they are coated with a molecular layer that prevents their aggregation and so leads to their homogeneous distribution in the ink or that renders the powders non-electroconductive for the purposes of laser printing, allowing them to be electrostatically charged so as to operate as toners. After the printing operation, this molecular layer is removed by a pressureless sintering treatment that confers a highly reactive surface on the particles.

Abstract: A carrier element includes a coupling to a heat source, a coupling to a heat sink, and a thermoelectric thin-layer element with a hot side and a cold side, arranged on the carrier element between the coupling to the heat source and the coupling to the heat sink. The hot side is in thermally conductive contact with the coupling to the heat source, and the cold side is in thermally conductive contact with the coupling to the heat sink. To avoid damaging tensile and shear stresses in the thermoelectric thin-layer element, especially in the thermoelectrically active material, while ensuring good thermal coupling at the same time, at least one elastic and/or flexible compensating section of the carrier element is set up between the coupling to the heat source and the coupling to the heat sink in such a way that it compensates for the difference between the expansions of the heat source and those of the heat sink by a change of shape of the compensating section.

Abstract: The invention relates to an arrangement comprising a thermo-electric generator having a hot side which absorbs heat from a heat source, a cold side which discharges heat to a heat sink, and electrical terminals for outputting electrical energy with an output voltage and an electric circuit with a maximum permissible input voltage, the inputs of which are connected to the electrical terminals of the thermo-electric generator. Such arrangements may be used, for example, in exhaust systems of motor vehicles for more efficient use of the energy.

Abstract: A thermoelectric element having high thermal resistance and requiring less semiconductor material than a conventional thermoelectric element with comparable performance comprises a substrate having a substrate front side and a substrate rear side opposite the substrate front side, a first contact, applied as a layer to the substrate front side, a second contact, applied as a layer to the substrate front side, a cut-off between the first and second contact which thermally and electrically separates the first and second contact from one another, and a thermoelectrically active layer having a top side and a bottom side, which are connected to one another by lateral delimiting surfaces, wherein the thermoelectrically active layer is arranged in the cut-off in such a way that the bottom side is on the substrate front side, and one of the lateral delimiting surfaces is against the first contact and one of the lateral delimiting surfaces is against the second contact.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: The invention relates to an arrangement comprising a thermo-electric generator having a hot side which absorbs heat from a heat source, a cold side which discharges heat to a heat sink, and electrical terminals for outputting electrical energy with an output voltage and an electric circuit with a maximum permissible input voltage, the inputs of which are connected to the electrical terminals of the thermo-electric generator. Such arrangements may be used, for example, in exhaust systems of motor vehicles for more efficient use of the energy.

Abstract: A thermoelectric element includes at least one thermocouple comprising an n-doped and a p-doped thermal leg made of semiconductor material, wherein the thermal legs extend between a hot and a cold side of the thermoelectric element and different temperatures can applied and tapped between the hot and the cold side. In order to create a thermoelectric element haying a high thermal power density that nevertheless ensures sufficient mechanical stability using less semiconductor material, the thermoelectric effect and the support function of the block between two components is split.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: The invention relates to a method for producing thermoelectric layers by depositing thermoelectric material on a substrate by means of sputter deposition. In order to create a method for producing thermoelectric layers that are better suited for use in thermogenerators, and in particular have higher Seebeck coefficients, the production of a target made of thermoelectric material is proposed by mixing at least two powdered starting materials having a particle size from 0.01 ?m-5000 ?m, while coupling in energy and depositing the thermoelectric material from the target on the substrate by way of magnetron sputter deposition.

Abstract: A thermoelectric element includes at least one thermopair and a pn-junction. The thermopair has a first material with a positive Seebeck coefficient and a second material with a negative Seebeck coefficient. The first material is selectively contacted by way of a conductor with the p-side of the pn-junction, and the second material is selectively contacted by way of a conductor with the n-side of the pn-junction.

Abstract: The invention relates to a thermoelectric element comprising at least one n-type layer (1) and at least one p-type layer (2) of one or more doped semiconductors, whereby the n-type layer(s) (2) are arranged to form at least one pn-type junction (3). At least one n-type layer (1) and at least one p-type (2) are contacted in an electrically selective manner, and a temperature gradient (T1, T2) is applied or tapped parallel (x-direction) to the boundary layer (3) between at the least one n-type layer (1) and p-type layer (2). At least one pn-type junction is formed essentially along the entire, preferably longest, extension of the n-type layer(s) (1) and the p-type layer(s) (2) and, thus, essentially along the entire boundary layer (3) thereof.

Abstract: The invention relates to a thermoelectric element comprising at least one n-type layer (1) and at least one p-type layer (2) of one or more doped semiconductors, whereby the n-type layer(s) (2) are arranged to form at least one pn-type junction (3). At least one n-type layer (1) and at least one p-type (2) are contacted in an electrically selective manner, and a temperature gradient (T1, T2) is applied or tapped parallel (x-direction) to the boundary layer (3) between at least one n-type layer (1) and p-type layer (2). At least one pn-type junction is formed essentially along the entire, preferably longest, extension of the n-type layer(s) (1) and of the p-type layer(s) (2) and thus essentially along the entire boundary layer (3) thereof.