Abstract: The invention relates to a thermal-type flow sensor (1) for a flow meter, comprising a main channel part (3b) with a main channel (3) for a medium whose flow is to be determined, a sensor tube (4), having a first tube portion (5), a second, opposite tube portion (8), a sensing portion (11) connecting the first and second tube portions, at least two sensing or heating elements (12) for measuring a temperature differential or a power differential in the sensor tube, a thermally conductive frame element (13) in contact with at least the first tube portion, the second tube portion as well as the main channel part, configured to equalize temperature gradients, wherein thermally conductive frame element (13) is a printed circuit board (PCB) (14).

Abstract: Flow measurement system comprising a flow tube for the fluid whose flow rate is to be determined, wherein said system comprises at least three ultrasound transducer circuitry, wherein each circuitry comprises an ultrasound transducer arranged for transmitting ultrasound signals through said fluid in a transmitting phase, and for receiving transmitted signals from another of said at least three ultrasound transducers in a receiving phase, multiple receiving circuits, wherein each receiving circuit is arranged for reading out one of said at least three ultrasound transducers in a corresponding receiving phase thereof, and multiplexer circuitry ground arranged for selectively connecting each of said multiple receiving circuits to a different one of said at least three ultrasound transducers, respectively.

Abstract: Flow measurement system comprising a flow tube for the fluid whose flow rate is to be determined, wherein said system comprises at least three ultrasound transducer circuitry, wherein each circuitry comprises an ultrasound transducer arranged for transmitting ultrasound signals through said fluid in a transmitting phase, and for receiving transmitted signals from another of said at least three ultrasound transducers in a receiving phase, multiple receiving circuits, wherein each receiving circuit is arranged for reading out one of said at least three ultrasound transducers in a corresponding receiving phase thereof, and multiplexer circuitry ground arranged for selectively connecting each of said multiple receiving circuits to a different one of said at least three ultrasound transducers, respectively.

Abstract: The invention relates to an ultrasonic flow meter comprising a flow tube for the fluid whose flow rate is to be determined. The flow meter comprises a transmitting element for emitting ultrasonic waves, which is provided on the outer jacket of the flow tube. A receiving element, which is provided on the outer jacket of the flow tube, is axially spaced from the transmitting element. An influencing element is provided between the transmitting element and the receiving element for influencing the velocity and/or the direction of a portion of the ultrasonic waves.

Abstract: The invention relates to an ultrasonic flow meter comprising a flow tube for the fluid whose flow rate is to be determined. The flow meter comprises a transmitting element for emitting ultrasonic waves, which is provided on the outer jacket of the flow tube. A receiving element, which is provided on the outer jacket of the flow tube, is axially spaced from the transmitting element. An influencing element is provided between the transmitting element and the receiving element for influencing the velocity and/or the direction of a portion of the ultrasonic waves.

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase.

Abstract: Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A pressure control system allows gas to be evacuated out of a semiconductor process chamber at a substantially constant rate of mass flow. A gas line connects the process chamber to a vacuum pump. A controllable valve having a variable sized opening is positioned between the process chamber and the vacuum pump. A pressure sensor is in turn positioned between the valve and the vacuum pump, proximate the inlet to the vacuum pump. The size of the variable sized opening is regulated based upon the pressure in the gas line measured by the pressure sensor. The size of the valve opening is varied to maintain the pressure measured by the pressure sensor at a constant value. As a result, because the quantity of gas flowing through the gas line is proportional to the gas pressure, a substantially constant mass flow of gas out of the chamber and into the pump can be achieved.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. This particle formation is minimized by heating the door plate to a temperature high enough to prevent condensation before flowing reactant gases into the process chamber. The door plate can be heated using a heat source, e.g., a resistive heater, that is in direct contact with the door plate or the heat source can heat the door plate from a distance by radiative or inductive heating. In addition, the door plate can open to allow loading and unloading of a wafer load. As it passes flanges near the door plate, the wafer load can transfer heat to those flanges. To prevent overheating, the flange is provided with a coolant-containing channel having walls that are spaced from the flange by O-rings.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: A gas supply system for pulse-wise feeding a reactant gas to a reactor, the gas supply system comprising: a first valve being a four-port diaphragm valve; a second valve which in an open state brings the first port into fluid communication with an exhaust and in a closed state closes off said fluid communication; wherein the gas supply system provides a reactant flow state in which the first valve is in an open state and the second valve is in a closed state, and wherein the gas supply system provides a purge state in which the first valve is closed and the second valve is in a open state. Also disclosed are a method of switching a process fluid by operating a gas supply system according to the invention and a valve assembly for use in such a gas supply system.

Abstract: In an apparatus for a treatment of a wafer at elevated temperatures, the wafer is taken out of the reactor after heat treatment with the help of a mechanical transport apparatus which preferably grips the wafer around the circumference and on the under side. The transport apparatus includes a wafer surrounding ring. The wafer is placed in a floating wafer reactor where it is cooled in a controlled manner. Transport for further action or treatment then takes place.

Abstract: An apparatus for treating wafers, provided with at least one treatment chamber, the apparatus being provided with a feeding section in which wafers contained in a wafer storage box can be fed into the apparatus, the apparatus being provided with a wafer handling apparatus, by means of which wafers can be taken out of the wafer storage boxes so as to be treated in the treatment chamber, and the apparatus being provided with at least one sensor box arranged such that the wafer handling apparatus can feed a wafer into the sensor box through an opening provided for that purpose in the at least one sensor box, and the at least one sensor box being arranged to carry out measurements at a wafer, wherein the at least one sensor box is movably arranged and the apparatus is provided with a sensor box handling apparatus arranged to move the at least one sensor box from a storage position to a measuring position.