Abstract: In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a plurality of multiple bit information storing memory cells, a plurality of buffer circuits, each buffer circuit being coupled to at least one multiple bit information storing memory cell of the plurality of multiple bit information storing memory cells, and a controller configured to control an access operation to access at least one multiple bit information storing memory cell using the buffer circuit coupled to the at least one multiple bit information storing memory cell to be accessed, and a buffer circuit of at least one other multiple bit information storing memory cell being coupled to at least one other multiple bit information storing memory cell.

Abstract: In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a memory cell block having a plurality of memory cells, a storage portion configured to store information about a quality characteristic of the memory cells of the memory cell block, and a controller configured to control a read operation, and to change the information about the quality characteristic depending on a quality of a read operation.

Abstract: Embodiments of the invention relate generally to an integrated circuit having a memory cell arrangement and a method for reading a memory cell state using a plurality of partial readings. In an embodiment of the invention, an integrated circuit having a memory cell arrangement is provided.

Abstract: An integrated circuit having a memory cell arrangement with a plurality of memory cells and a memory cell arrangement controller is provided. The memory cell arrangement controller is configured such that during programming of at least one memory cell of the plurality of memory cells, at least one memory cell, which is arranged adjacent to the memory cell to be programmed, is driven to shield the memory cell to be programmed.

Abstract: In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a memory cell block having a plurality of memory cells, a storage portion configured to store information about a quality characteristic of the memory cells of the memory cell block, and a controller configured to control a read operation, and to change the information about the quality characteristic depending on a quality of a read operation.

Abstract: Embodiments of the present invention relate generally to integrated circuits, methods for manufacturing an integrated circuit, memory modules, and computing systems.

Abstract: In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a plurality of multiple bit information storing memory cells, a plurality of buffer circuits, each buffer circuit being coupled to at least one multiple bit information storing memory cell of the plurality of multiple bit information storing memory cells, and a controller configured to control an access operation to access at least one multiple bit information storing memory cell using the buffer circuit coupled to the at least one multiple bit information storing memory cell to be accessed, and a buffer circuit of at least one other multiple bit information storing memory cell being coupled to at least one other multiple bit information storing memory cell.

Abstract: An integrated circuit having a memory cell arrangement with a plurality of memory cells and a memory cell arrangement controller is provided. The memory cell arrangement controller is configured such that during programming of at least one memory cell of the plurality of memory cells, at least one memory cell, which is arranged adjacent to the memory cell to be programmed, is driven to shield the memory cell to be programmed.

Abstract: Embodiments of the invention relate generally to an integrated circuit having a memory cell arrangement and a method for reading a memory cell state using a plurality of partial readings. In an embodiment of the invention, an integrated circuit having a memory cell arrangement is provided.

Abstract: A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predetermined number of bits of a first state is stored in a check section of the cell array. The check section is read by applying sense signals of different amplitudes, where in each case a secondary control word is obtained. By checking in each secondary control word the number of bits of the first state, the margins of the current sense signal amplitude towards the sense window limits may be checked and the sense signal amplitude may be adapted permanently to a sense window drift, so as to enhance the reliability of the memory device.

Abstract: Embodiments of the present invention relate generally to integrated circuits, methods for manufacturing an integrated circuit, memory modules, and computing systems.

Abstract: A method for setting a read voltage that is used to read data from a nonvolatile memory is disclosed. Logic states from the first state set are stored in a particular number of digits in the multiplicity of memory areas. The memory areas are read in succession. The operation of reading one of the memory areas involves a number of reading steps for reading state information the read voltage being varied for each reading step and the state information that has been read being provided after each reading step. Control information based on the particular number of digits is provided. The state information that has been provided is compared with the control information. The read voltage to be set or a read voltage range to be set is determined on the basis of the results of the comparison.