Abstract: A semiconductor device includes a substrate, a first lower pattern and a second lower pattern on the substrate and arranged in a line in a first direction, a first active pattern stack disposed on and spaced apart from the first lower pattern, a second active pattern stack disposed on and spaced apart from the first lower pattern, a fin-cut gate structure disposed on the first lower pattern and overlapping a portion of the first lower pattern, a first gate structure surrounding the first active pattern stack and extending in a second direction crossing the first direction, a second gate structure surrounding the second active pattern stack and extending in the second direction, and a device isolation layer between the first gate structure and the second gate structure and separating the first lower pattern and the second lower pattern.

Abstract: A semiconductor device includes a first transistor in a first region of a substrate and a second transistor in a second region of the substrate. The first transistor includes multiple first semiconductor patterns; a first gate electrode; a first gate dielectric layer; a first source/drain region; and an inner-insulating spacer. The second transistor includes multiple second semiconductor patterns; a second gate electrode; a second gate dielectric layer; and a second source/drain region. The second gate dielectric layer extends between the second gate electrode and the second source/drain region and is in contact with the second source/drain region. The first source/drain region is not in contact with the first gate dielectric layer.

Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

Abstract: A semiconductor device including a buried insulating layer on a substrate; a lower semiconductor layer on the buried insulating layer, the lower semiconductor layer including a first material; a channel pattern on the lower semiconductor layer, the channel pattern being spaced apart from the lower semiconductor layer and including a second material different from the first material; and a gate electrode surrounding at least a portion of the channel pattern.

Abstract: A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.

Abstract: A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper surface of the substrate, a plurality of nanosheets on the substrate and separated from each other, and a gate electrode and a gate insulating layer on the substrate. The nanosheets define channel regions that extend in a first direction between the source/drain regions. The gate electrode surrounds the nanosheets and extends in a second direction intersecting the first direction. The gate insulating layer is between the nanosheets and the gate electrode. A length of the gate electrode in the first direction may be greater than a space between adjacent nanosheets among the nanosheets.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are disposed at a plurality of levels, respectively, and spaced apart from each other in a vertical direction on an upper surface of a substrate. The gate structure is disposed on the substrate, at least partially surrounds a surface of each of the channels, and extends in a first direction substantially parallel to the upper surface of the substrate. The source/drain layer is disposed at each of opposite sides of the gate structure in a second direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the first direction and is connected to sidewalls of the channels. A length of the gate structure in the second direction changes along the first direction at a first height from the upper surface of the substrate in the vertical direction.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first wire pattern disposed on a substrate and extending in a first direction; a first gate electrode surrounding the first wire pattern and extending in a second direction, the first direction intersecting the second direction perpendicularly; a first transistor including the first wire pattern and the first gate electrode; a second wire pattern disposed on the substrate and extending in the first direction; a second gate electrode surrounding the second wire pattern and extending in the second direction; and a second transistor including the second wire pattern and the second gate electrode, wherein a width of the first wire pattern in the second direction is different from a width of the second wire pattern in the second direction.

Abstract: Semiconductor devices are provided. The semiconductor devices may include a first wire pattern extending in a first direction on a substrate and a second wire pattern on the first wire pattern. The second wire pattern may be spaced apart from the first wire pattern and extends in the first direction. The semiconductor devices may also include a first gate structure at least partially surrounding the first wire pattern and the second wire pattern, a second gate structure spaced apart from the first gate structure in the first direction, a first source/drain region between the first gate structure and the second gate structure, a first spacer between a bottom surface of the first source/drain region and the substrate, a first source/drain contact on the first source/drain region, and a second spacer between the first source/drain contact and the first gate structure.

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.