Abstract: A device for growing at least one artificially manufactured single crystal, in particular a sapphire single crystal, includes at least one crucible wall, the crucible wall having an open first end portion and a base-side second end portion arranged at a distance from the first end portion along a longitudinal axis, wherein when viewed from the at least one crucible wall in cross-section in relation to the longitudinal axis a crucible wall inner surface is defined, and at a distance of one wall thickness thereto a crucible wall outer surface is also defined, at least one crucible base, the crucible base being arranged in the base-side second end portion, and wherein a receiving area for the formation of the single crystal is defined by the crucible wall and the crucible base, wherein the crucible wall has constant thermal conductivity and/or identical mechanical properties across its entire extension.

Abstract: In a method of manufacturing a monocrystalline crystal, in particular a sapphire, a monocrystalline seed crystal is arranged in a base region of a crucible with a cylindrical jacket-shaped crucible wall or forms a base of the crucible and a crystallographic c-axis of the seed crystal is aligned corresponding to a longitudinal axis of the crucible extending in the direction of the top of the crucible wall, whereupon a base material is arranged above the seed crystal in the crucible and melted, crystal growth taking place progressively in the direction of the c-axis by crystallization at a boundary layer between melted base material and seed crystal.

Abstract: A device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.

Abstract: A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.

Abstract: A method for growing crystals using PVT or PVD or CVD, includes: providing: a chamber for crystal growth, a crucible in the chamber including at least one deposition section with a seed crystal and a base material for crystal growth, at least one temperature monitoring device, a gas supply device and at least one fluid inlet and outlet, and a pressure monitoring device; evacuating the chamber using a pumping device; flushing the chamber with an inert gas; heating the chamber to a growth temperature of 2000 to 2400° C. using at least one heating device; decreasing pressure to 0.1 to 100 mbar; supplying a dopant, (during a growth process); regulating process parameters in the growth process; increasing chamber pressure at the growth process end; cooling down the chamber; wherein the heating of the chamber from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes.

Abstract: A device for growing single crystals, in particular single crystals of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the crystals, wherein the device hast at least one seed crystal layer wherein the crucible is arranged in a chamber, in particular made of a glass material, for example quartz glass, wherein an induction heater is arranged around the chamber. The crucible is designed to have multiple parts and includes a crucible bottom section, at least one crucible wall part, and a crucible cover part, which are releasably connected to one another.

Abstract: A device for growing crystals, includes a crucible and an enveloping unit surrounding it for the thermal insulation of the crucible The enveloping unit is held on the crucible in its position relative thereto by a holding unit The holding unit includes at least one holding element designed to be oblong and preferably non-rigid, having a first and second end section The holding element surrounds the enveloping unit circumferentially on the side facing away from the crucible and contacts it.

Abstract: A device for producing single crystals of silicon carbide has a furnace and a chamber with a crucible and a seed crystal, the chamber being accommodated in the furnace, wherein a base material containing silicon carbide is arranged in the crucible, wherein the base material contains a mixture of silicon carbide powder and silicon carbide lumps.

Abstract: A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

Abstract: A crucible device for growing crystals includes a container being arrangeable in a heating chamber of a heating apparatus, and a seed fixture element. The container includes a base section and the seed fixture element includes a seed surface which is configured for attaching a seed crystal. The seed fixture element is moveable coupled to the base section such that the distance between the seed surface and the base section is adjustable.

Abstract: The present invention relates to an apparatus for growing crystals. The apparatus comprises a chamber and a crucible being arranged in a heatable accommodation space of the chamber, wherein the crucible comprises an inner volume which is configured for growing crystals inside. The crucible comprises a bottom from which respective side walls extend to a top section of the crucible. The crucible comprises at least one a deposition section which is configured for attaching a seed crystal, wherein the deposition section is formed on at least one of the side wall and the top section of the crucible.

Abstract: The invention in general relates to the single-sided wet chemical surface modification as in particular the coating of flat substrates. In particular, the present invention relates to a method as well as to an apparatus for the coating of substrates in the course of the production of thin film solar cells or modules made from glass, metal, or plastic with metallic compounds such as i.e. cadmium sulphide or zinc sulphide.