Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.

Abstract: A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a controller. The power bus accepts a variable number of Segmented LEDs. The controller receives AC power and provides a power signal on the power bus. Each Segmented LED is characterized by a driving voltage that is greater than 3 times the driving voltage of a conventional LED fabricated in the same material system as the Segmented LED. The number of Segmented LEDs in the light source is chosen to compensate for variations in the light output of individual Segmented LEDs introduced by the manufacturing process. In another aspect of the invention, the number of Segmented LEDs connected to the power bus can be altered after the light source is assembled.

Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.

Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.

Abstract: A light source that is adapted to replace existing fluorescent tubes in an existing fluorescent light fixture is disclosed. The light source includes a plurality of LEDs mounted on a heat-dissipating structure, first and second plug adapters that mate with the florescent tube connectors of the fluorescent tube the light source is to replace, and a power adapter that converts power from a fluorescent tube ballast presented on the first and second plug adapters to DC power that powers the LEDs. The light source is powered from the output of the existing fluorescent ballast. The light source can utilize the existing metallic enclosure as a heat-radiating surface and/or direct air heat transfer from the surface of the heat-dissipating structure.

Abstract: A light source that is adapted to replace existing fluorescent tubes in an existing fluorescent light fixture is disclosed. The light source includes a plurality of LEDs mounted on a heat-dissipating structure, first and second plug adapters that mate with the florescent tube connectors of the fluorescent tube the light source is to replace, and a power adapter that converts power from a fluorescent tube ballast presented on the first and second plug adapters to DC power that powers the LEDs. The light source is powered from the output of the existing fluorescent ballast. The light source can utilize the existing metallic enclosure as a heat-radiating surface and/or direct air heat transfer from the surface of the heat-dissipating structure.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.

Abstract: A drive circuit for a color temperature tunable LED light source. An apparatus includes a current driver configured to output a first drive current to drive a first group of LED chips of the light source to emit first color temperature light and to output a second drive current to drive a second group of LED chips of the light source to emit second color temperature light. The apparatus also includes a controller coupled to the current driver and configured to control the first and second drive currents so that the first color temperature light and the second color temperature light combine to produce a resulting light having a selected color temperature and a selected intensity value.

Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.

Abstract: An LED-based lighting device and method for making the same are disclosed. The lighting device includes an LED light source mounted on a heat sink, a power adaptor, and a controller. The power adaptor is configured to be interchangeable with a conventional incandescent bulb power adapter. The controller provides an average current to the LED light source when power is coupled to the device via the power adaptor. The average current causes the LED light source to generate light of a predetermined standard intensity that is substantially independent of variations in the LED light source from device to device. In one aspect of the invention, the LED light source includes a plurality of LEDs connected in series, the LEDs are bonded to the heat sink and connected to one another in series by wire bonds and to conducting traces on the heat sink.

Abstract: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducting material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Abstract: A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact is electrically connected to the first layer in the second segment.

Abstract: A light source that is adapted to replace existing fluorescent tubes in an existing fluorescent light fixture is disclosed. The light source includes a plurality of LEDs mounted on a heat-dissipating structure, first and second plug adapters that mate with the florescent tube connectors of the fluorescent tube the light source is to replace, and a power adapter that converts power from a fluorescent tube ballast presented on the first and second plug adapters to DC power that powers the LEDs. The light source is powered from the output of the existing fluorescent ballast. The light source can utilize the existing metallic enclosure as a heat-radiating surface and/or direct air heat transfer from the surface of the heat-dissipating structure.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

Abstract: A color temperature tunable LED light source. An apparatus is provided that includes a substrate, a first group of LED chips mounted on the substrate and configured to produce first color temperature light having a first intensity value determined from a first drive current, and a second group of LED chips mounted on the substrate and configured to produce second color temperature light having a second intensity value determined from a second drive current, wherein the first color temperature light and the second color temperature light combine to produce light having a resulting color temperature and a resulting intensity value.

Abstract: A drive circuit for a color temperature tunable LED light source. An apparatus includes a current driver configured to output a first drive current to drive a first group of LED chips of the light source to emit first color temperature light and to output a second drive current to drive a second group of LED chips of the light source to emit second color temperature light. The apparatus also includes a controller coupled to the current driver and configured to control the first and second drive currents so that the first color temperature light and the second color temperature light combine to produce a resulting light having a selected color temperature and a selected intensity value.

Abstract: A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode.

Abstract: A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.

Abstract: A light source having a substrate with a plurality of component LED light generators mounted thereon is disclosed. The substrate has a first metallic surface characterized by a normal that points in a normal direction. The first metallic surface is in contact with air over the first metallic surface. The component LED light generators are mounted directly on the first metallic surface. Each component LED light generator includes an LED characterized by an operating temperature and emitting light in the normal direction. Each LED generator generates more than 0.5 watts of heat. The component LED light generators are spaced apart on the first metallic surface such that the operating temperature remains less than 75° C. above the air temperature. In one aspect of the invention, the first metallic surface surrounding each component LED light generator radiates an amount of heat equal to the heat generated by that component LED light generator.