Patents by Inventor Giampiero Ferraris

Giampiero Ferraris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for obtaining passive thin-layer circuits with resistive lines having different layer resistances and passive circuit made by said process
    Patent number: 5152869
    Abstract: A process on a single insulating substrate for depositing in succession a thin layer of tantalium with high resistivity doped with nitrogen and oxygen, a less thin layer of titanium with low resistivity doped with nitrogen, a layer of palladium and a thick layer of gold. Selective chemical attacks of said layers then permit tracing of conducting lines, resistive lines with greater resistance and resistive lines with less resistance.
    Type: Grant
    Filed: December 11, 1990
    Date of Patent: October 6, 1992
    Assignee: Siemens Telecommunicazioni S.p.A.
    Inventors: Giampiero Ferraris, Antonio Tersalvi
  • Process for making metallized holes in a dielectric substrate by vacuum deposition of metals and the product obtained thereby
    Patent number: 5011761
    Abstract: A process for making metallized holes in a dielectric substrate which, after galvanic growth of the conductive paths delimited by photoresist on the substrate, includes a drilling step of the substrate and electrogalvanic creation of rivets protruding beyond the edges of the holes on the front of the substrate. The steps of completion of the conductive and resistive paths on the front, deposition of metals on the back, reinforcement of the rivets and galvanic growth of the back and of the metals deposited inside the hole then follow.
    Type: Grant
    Filed: February 27, 1989
    Date of Patent: April 30, 1991
    Assignee: Siemens Telecommunicazioni S.p.A.
    Inventors: Tarcisio Cagnin, Giampiero Ferraris
  • Process to obtain thin film lines
    Patent number: 4812388
    Abstract: It is described a process to obtain thin film lines by photolithography of thick resist and subsequent selective galvanic growth of gold which enables to obtain very thin lines (2-10 micron) with high definition, that is with nearly vertical walls and with a tolerance in the width of about 1 micron. Such results have been achieved by using polyimide as thick resist, by particular cure cycles of the same polyimide and by a particular dry etching of the polyimide layer to obtain seats in which afterwards the lines become grown.
    Type: Grant
    Filed: September 25, 1987
    Date of Patent: March 14, 1989
    Assignee: GTE Telecomunicazioni, S.p.A.
    Inventors: Giampiero Ferraris, Antonio Tersalvi
  • Titanium nitride as one layer of a multi-layered coating intended to be etched
    Patent number: 4226932
    Abstract: A multilayered thin film structure comprising layers of resistive and conductive materials on a substrate, said layers including tantalum nitride, palladium and gold. A layer of titanium nitride, is used between the tantalum nitride and palladium layers to act as an adhesive layer, to prevent undercutting during etching, and to allow all metal depositing to be performed during one step.
    Type: Grant
    Filed: July 5, 1979
    Date of Patent: October 7, 1980
    Assignee: GTE Automatic Electric Laboratories Incorporated
    Inventor: Giampiero Ferraris