Abstract: A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

Abstract: A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device further includes at least one textured light emission surface arranged to extract at least some light generated within the device.

Abstract: Illumination assemblies, components, and related methods are described. An illumination assembly can include at least one solid state light-emitting device, an emission surface through which light is emitted, and a wavelength converting material that wavelength converts at least some light emitted by the solid state light-emitting device. The wavelength converting material can have a first density per unit area of the emission surface at a first location and a second density per unit area of the emission surface at a second location, wherein the second density is substantially different from the first density, and wherein the density per unit area is defined with a 1×1 cm2 averaging area. Another illumination assembly can include a light guide configured to receive light emitted by a solid state light-emitting device. The light guide can have a length along which received light propagates and an emission surface substantially parallel to the length of the light guide and through which light is emitted.

Abstract: Illumination assemblies, components, and related methods are described. An illumination assembly can include at least one solid state light-emitting device, and at least one light guide including a light homogenization region configured to receive light emitted by the solid state light-emitting device and including a light output boundary. The light homogenization region substantially uniformly distributes light outputted over the light output boundary. A wavelength converting material can be disposed within at least a portion of the light homogenization region. In some assemblies, a light extraction region can be configured to receive light from the light output boundary of the light homogenization region, and can have a length along which received light propagates and an emission surface through which light is emitted. The light extraction region can include a wavelength converting material disposed within at least a portion of the light extraction region.

Abstract: Methods of forming light-emitting structures, as well as related devices and/or systems are described. In some cases, the methods utilize a layer transfer and/or layer separation step(s) used to form such structures.

Abstract: Illumination assemblies, components, and related methods are described. An illumination assembly is provided that comprises a plurality of illumination tiles each having a light emission surface. The plurality of illumination tiles are arranged in a two-dimensional array. The illumination tiles are constructed and arranged so as to provide a substantially contiguous illumination surface comprising the light emission surfaces of the plurality of the illumination tiles. Each illumination tile is illuminated by at least one solid state light-emitting device. A method of local dimming an illumination assembly of a display (e.g., LCD) backlight unit is also provided.

Abstract: Illumination assemblies, components, and related methods are described. A plurality of illumination tiles may be arranged in a two-dimensional array. In one embodiment, an illumination tile comprises at least one solid state light-emitting device and a light guide including an edge constructed and arranged to receive light from the solid state light-emitting device, and a top emission surface constructed and arranged to emit light received by the edge, wherein the solid state light-emitting device is disposed under the top emission surface.

Abstract: A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019 boron atoms/cm3. A method for forming a semiconductor structure includes forming a uniform etch-stop layer providing a handle wafer, and bonding the uniform etch-stop layer to the handle wafer. The uniform etch-stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019 boron atoms/cm3.

Abstract: A semiconductor-based structure includes first, second, and intermediate layers, with the intermediate layer bonded directly to the first layer, and in contact with the second layer. Parallel to the bonded interface, the lattice spacing of the second layer is different than the lattice spacing of the first layer, though first and second layers are each formed of essentially the same semiconductor. A method for making a semiconductor-based structure includes directly bonding a first layer to an intermediate layer, and providing a second layer in contact with the intermediate layer.

Abstract: A method is disclosed for creating a transferred composite in accordance with an embodiment of the invention. The method includes the steps of depositing a buffer structure that on a first substrate; depositing a bonding structure including at least one layer of a strained semiconductor material on the buffer structure, wafer bonding the exposed surface of the bonding structure to a second substrate to form a wafer bonded pair; and removing the first substrate and at least a portion of the buffer structure. The layer of a strained semiconductor material has a thickness that is greater than the equilibrium critical thickness of said layer of strained semiconductor material, in accordance with an embodiment of the invention whereby the strained semiconductor layer is grown at low temperatures.

Abstract: A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1-xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in composition. The etch stop is used for micromachining by aqueous anisotropic etchants of silicon such as potassium hydroxide, sodium hydroxide, lithium hydroxide, ethylenediamine/pyrocatechol/pyrazine (EDP), TMAH, and hydrazine. These solutions generally etch any silicon containing less than 7×1019 cm−3 of boron or undoped Si1-xGex alloys with x less than approximately 18. Alloying silicon with moderate concentrations of germanium leads to excellent etch selectivities, i.e., differences in etch rate versus pure undoped silicon. This is attributed to the change in energy band structure by the addition of germanium.