Patents by Inventor Gianpaolo Spadini

Gianpaolo Spadini has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned cross-point phase change memory-switch array
    Patent number: 11563055
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: January 24, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Jong Won Lee, Gianpaolo Spadini, Derchang Kau
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 10783965
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: September 22, 2020
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY
    Publication number: 20200279889
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Jong Lee, Gianpaolo Spadini, Derchang Kau
  • Self-aligned cross-point phase change memory-switch array
    Patent number: 10692930
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: June 23, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Jong Won Lee, Gianpaolo Spadini, Derchang Kau
  • Replacement materials processes for forming cross point memory
    Patent number: 10475853
    Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: November 12, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Jong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20190259453
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Inventors: DerChang Kau, Gianpaolo Spadini
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 10304534
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: May 28, 2019
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20190096484
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: November 21, 2018
    Publication date: March 28, 2019
    Inventors: DerChang Kau, Gianpaolo Spadini
  • REPLACEMENT MATERIALS PROCESSES FOR FORMING CROSS POINT MEMORY
    Publication number: 20190013358
    Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
    Type: Application
    Filed: July 25, 2018
    Publication date: January 10, 2019
    Inventors: Jong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 10163507
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: December 25, 2018
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20180366196
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: August 24, 2018
    Publication date: December 20, 2018
    Inventors: DerChang Kau, Gianpaolo Spadini
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 10090050
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: October 2, 2018
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • Replacement materials processes for forming cross point memory
    Patent number: 10050084
    Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: August 14, 2018
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Jong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20180182457
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: February 26, 2018
    Publication date: June 28, 2018
    Inventors: DerChang Kau, Gianpaolo Spadini
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 9905296
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: February 27, 2018
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20170345498
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: August 14, 2017
    Publication date: November 30, 2017
    Inventors: DerChang Kau, Gianpaolo Spadini
  • REPLACEMENT MATERIALS PROCESSES FOR FORMING CROSS POINT MEMORY
    Publication number: 20170263684
    Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
    Type: Application
    Filed: April 6, 2017
    Publication date: September 14, 2017
    Inventors: Jong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
  • Apparatuses and methods including memory access in cross point memory
    Patent number: 9734907
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments. the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Grant
    Filed: February 20, 2017
    Date of Patent: August 15, 2017
    Assignee: Micron Technology, Inc.
    Inventors: DerChang Kau, Gianpaolo Spadini
  • APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY
    Publication number: 20170162263
    Abstract: Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
    Type: Application
    Filed: February 20, 2017
    Publication date: June 8, 2017
    Inventors: DerChang Kau, Gianpaolo Spadini
  • Replacement materials processes for forming cross point memory
    Patent number: 9659997
    Abstract: Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: May 23, 2017
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Jong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau