Patents by Inventor Gianpiero Montalbano

Gianpiero Montalbano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8097868
    Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: January 17, 2012
    Assignee: STMicroelectronics S.r.l.
    Inventors: Mariantonietta Monaco, Massimiliano Fiorito, Gianpiero Montalbano, Salvatore Coffa
  • Patent number: 7804078
    Abstract: The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: September 28, 2010
    Assignee: STMicroelectronics S.r.l.
    Inventors: Massimiliano Fiorito, Mariantonietta Monaco, Gianpiero Montalbano, Salvatore Coffa
  • Publication number: 20080283780
    Abstract: The present disclosure relates to an architecture of a device with galvanic optocoupling of the type having at least one optical source and one optical detector, optically connected by means of an insulation layer that functions to transmission optical signals, and having at least one input terminal and one output terminal, the optical source and the optical detector connected to a respective first and second voltage reference. The optical source is realized by a structure integrated directly above the insulation layer in correspondence with the optical detector, the architecture thus completely realized inside a single integration island.
    Type: Application
    Filed: January 24, 2008
    Publication date: November 20, 2008
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Massimiliano Fiorito, Mariantonietta Monaco, Gianpiero Montalbano, Salvatore Coffa
  • Publication number: 20080173879
    Abstract: A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer (40) is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.
    Type: Application
    Filed: January 24, 2008
    Publication date: July 24, 2008
    Applicant: STMicroelectronics S.r.l.
    Inventors: Mariantonietta Monaco, Massimiliano Fiorito, Gianpiero Montalbano, Salvatore Coffa
  • Patent number: 6033947
    Abstract: The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.
    Type: Grant
    Filed: August 25, 1997
    Date of Patent: March 7, 2000
    Assignee: Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
    Inventors: Giovanna Cacciola, Salvatore Leonardi, Gianpiero Montalbano
  • Patent number: 5708290
    Abstract: The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.
    Type: Grant
    Filed: October 27, 1995
    Date of Patent: January 13, 1998
    Assignee: Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
    Inventors: Giovanna Cacciola, Salvatore Leonardi, Gianpiero Montalbano