Abstract: Self-assembled-monolayer grafted seeding and electroless plating processes for patterning of metal-alloy thin films, comprising the steps of treating the surface of the substrate by organic species, covering the organic species-SAM coated surface of dielectric substrate with a template, treating the surface by vacuum plasma, immersing the substrate into an aqueous solution, removing the hydrogen from the surface of the substrate, immersing the negatively charged dielectric surface into an aqueous metal salt solutions for adsorbing metal ions, reducing the positively charged metallic cations into neutral metal particles which act as catalysts by a reducing agent, and immersing the dielectric substrate into an electroless-plating solution for deposition of metal and metal-alloy thin film patterns.

Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.

Abstract: Process for thin-film electroless-plated deposition onto the substrate, which is either hydrophilic or hydrophobic silicon based dielectric material (e.g., silicon dioxide, silicate glass, or polysiloxanes), is a substitute for the conventional sensitization/activation route by pre-treating the surface of the dielectric substrate by plasma (H2/N2, N2, H2, or O2), immersing the substrate in a basic aqueous solution for removing hydrogen, immersing the substrate in a basic aqueous solution of metal ions for adsorbing the metal ions thereon, reducing the metal ions on the surface of the substrate, and immersing the substrate in an electroless-plating solution to deposit an electroless-plated metal film. The substrate formed of hydrophobic polysiloxanes which is properly pretreated by gaseous plasma can be immersed in a basic solution with strong oxidizing capability and/or performing a selective pattern by plasma treatment.

Abstract: A solvent, such as deionized water, is heated up to boil to remove the oxygen dissolved in the water before preparing the plating solutions for the growth of copper interconnects. The resistance of the copper grown from the EDD solutions having undergone the oxygen-removing process is greatly improved, down to a value very close to copper's ideal value.

Abstract: A molding technique for copper interconnecting wires by electrochemical displacement deposition on the pre-shaped metal layer in accordance with the present invention is used to form an adhering layer on a substrate and a sacrificial layer on the adhering layer. The sacrificial layer is patterned according to the copper interconnecting wires and displaced to form the copper interconnecting wires in a specific chemical solution.

Abstract: An oxygen-removing pre-process for copper interconnect grown by electrochemical displacement deposition is to remove the oxygen in the reaction solution before displacement and deposition a copper film/conducting wire such that the copper film/conducting wire is grown and has a lower electric resistance.

Abstract: The present invention relates to a fast diffusion recipe for making silicon by NO complexes, which can quicken impurities diffusion by NO complexes, thus reducing effectiveness for a given period of time and cost of production. When it is used to make CMOS well, processing period would be more rapidly. Because of the produced interface depth is affected by ventilation at stage of heat treatment, and obtaining deeper depth by N2O compared with using traditional N2, it is thus clear that this recipe features application and use value.